Effect of illumination intensity on the characteristics of Cu(acac)2/n-Si photodiode

Abdel-Khalek, H.; Shalaan, E.; Salam, Mohamed Abdel; El-Mahalawy, Ahmed M.

doi:10.1016/j.synthmet.2018.09.009

Cited by 54 publications

(18 citation statements)

References 74 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The deviation of the J-V semilogarithmic relation from the linearity may be due to the high parasitic series resistance of the fabricated devices. The dark parasitic series resistance of the fabricated devices is estimated using modified Norde's method [91,92], as shown in Fig. S3 (supporting information).…”

Section: Photodetector Characterizationsmentioning

confidence: 99%

Efficacy assessment of metalloporphyrins as functional materials for photodetection applications: role of central tetrapyrrole metal ions

2022

Self Cite

View full text Add to dashboard Cite

Despite the continued research, it is still not entirely clear how important characteristics of metalloporphyrins are exploited for optoelectronic applications. Consequently, the stimulant aim for this work is to design and implement organic/inorganic heterojunctions based on metalloporphyrins (CuTPP, NiTPP, FeTPPCl, and MnTPPCl)/n-Si and evolve their photodetection performance. To evaluate the performance variation of variously manufactured photodetectors, structural characterizations using XRD, Raman spectroscopy, XPS, and AFM are combined with optical absorption and photoluminescence. Core level emissions are used to unveil the deposited films’ electronic and structural features. The estimated energy gap values are found to be 2.4, 2.53, 2.49, and 2.43 eV for CuTPP. NiTPP. FeTPPCl, and MnTPPCl, respectively. The fabricated devices’ PL-spectra are analyzed, where CuTPP exhibited the lowest value of excitonic binding energy. The photodetection performance is evaluated via the J–V relation under dark and various radiant illumination power. The microelectronic parameters of the manufactured heterojunctions are estimated. Ultimately, the photodetectors' figures of merit are estimated for all the fabricated devices, where CuTPP/n-Si heterojunction achieved the best performance and highest values of R = 11.95 mA/W, D* = 8.7 × 109 Jones, LDR = 46.18 dB, SNR = 203.4, and trise/tfall = 51.32/54.29 ms. Consequently, MTPP-based photoreceptors would play an active role as a powerful tool for light detection soon. Graphical abstract

show abstract

Section: Photodetector Characterizationsmentioning

confidence: 99%

Efficacy assessment of metalloporphyrins as functional materials for photodetection applications: role of central tetrapyrrole metal ions

2022

Self Cite

View full text Add to dashboard Cite

show abstract

“…Upon illumination, the estimated values of the ideality factor were decreased from 4.98 (in the dark) to 3.78 (under 80 mW/cm 2 irradiance). The high values of ideality factor over-unity may be attributed to many factors such as tunnelling process [104], the image-forces effect [105], series resistance [106], inhomogeneity of barrier height and the existence of interface states [107,108]. Herein, the series resistance and the interfacial layer existence have the primary responsibility of the high value of ideality factor.…”

Section: Quantum Neural Network (Qnn)mentioning

confidence: 99%

“…In this essence, many models were developed to estimate the values of series resistance, but each model has its limitations [109]. Subsequently, the series resistance of the fabricated device was estimated using a modified Nord's model, which is applicable to the whole voltage range [108][109][110][111]. A significant decrement in the series resistance from 2.96 kΩ to 0.10 kΩ upon increasing the illumination intensity from 0 mW/cm 2 to 80 mW/cm 2 is observed.…”

Section: Quantum Neural Network (Qnn)mentioning

confidence: 99%

“…This decrement may be explained as follows; under the influence of illumination, the photo-generated charge carriers would be trapped at either at p-Si/NTCDA interface or NTCDA/ electrode interface. Increasing the illumination intensity increases the density of photo-generated charge carriers and decreases the probability of trapping charges, decreasing the series resistance [108,112].…”

Section: Quantum Neural Network (Qnn)mentioning

confidence: 99%

See 1 more Smart Citation

Classical and quantum regression analysis for the optoelectronic performance of NTCDA/p-Si UV photodiode

El-Mahalawy

El-Safty

2021

Optik

Self Cite

View full text Add to dashboard Cite

“…In this way, this alteration in the current due to light displays that the produced photodiode has photoconductivity and can therefore be used as a photodiode or photosensor. [44][45][46]. -1MHz); shows the C-V and G/ω-V characteristics of the produced diode at room temperature (300 K).…”

Section: Photocurrent Measurements Of the Diodementioning

confidence: 99%

Production and Electrical Properties of a CuZnAlMn(SMA)/p-Si Diode

Aldırmaz¹,

Güler²,

Güler³

2021

Preprint

View full text Add to dashboard Cite

In this study, the Cu-23.37%Zn-13.73%Al-2.92%Mn (at.%) alloy was used. Phase identification was performed with the Scanning electron microscope (SEM), and energy-dispersive X-ray (EDX). We observed in the austenite phase in Cu-23.37%Zn-13.73%Al-2.92%Mn (at.%) alloy. To produce a new Schottky diode, CuZnAlMn alloy was exploited as a Schottky contact on p-type semiconductor silicon substrate. To calculate the characteristics of the produced diode, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) analyzes were taken at room temperature (300 K), in the dark and under various lights. Using electrical measurements, the diode's ideality factor (n), barrier height (Φb), and other diode parameters were calculated. Besides, the conductance / capacitance-voltage (G/C-V) characteristics of the diode were studied and in a wide frequency interval at room temperature. Also, the capacitance and conductance values strongly rely on the frequency. From the present experimental results, the obtained diode can be used for optoelectronic devices.

show abstract

Effect of illumination intensity on the characteristics of Cu(acac)2/n-Si photodiode

Cited by 54 publications

References 74 publications

Efficacy assessment of metalloporphyrins as functional materials for photodetection applications: role of central tetrapyrrole metal ions

Efficacy assessment of metalloporphyrins as functional materials for photodetection applications: role of central tetrapyrrole metal ions

Classical and quantum regression analysis for the optoelectronic performance of NTCDA/p-Si UV photodiode

Production and Electrical Properties of a CuZnAlMn(SMA)/p-Si Diode

Contact Info

Product

Resources

About