Effect of implanting silicon in buried oxide on the radiation hardness of the partially-depleted CMOS/SOI

Abstract

In order to improve the total dose radiation hardness of the buried oxides(BOX) of separation by implanted oxygen(SIMOX) silicon on insulator (SOI),we implanted silicon into the BOX at a dose of 1×1015cm-2 and then annealed at 800 in N2 ambience. Partially depleted CMOS/SOI inverters with enclosed-gate structure fabricated on improved SIMOX substrate and standard SIMOX substrate were exposed to 60Co -ray radiation. The results of demonstrate that compare to standard CMOS/SOI inverters; the improved CMOS/SOI inverters have less switching voltage shifts and smaller leakage current after the same total dose irradiation.

Total dose radiation effects on SOI NMOS transistors with different layouts

“…We have recently reported that partially depleted SOI MOS transistors, fabricated in a standard 3 µm SOI CMOS (Complementary MOS) process, could achieve radiation hard performance by hardening the buried oxide and prevent back channel conduction in very harsh radiation environment [2][3][4] . We have been pursuing aggressively the development of radiation hard SOI CMOS device structures for designing radiation hard circuits to meet challenges in the near future space application.…”