Effect of In composition on electrical performance of AlInGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si

Abstract

Al x In y Ga ( 1 − x − y ) N / GaN heterostructures were grown on 4-in. p-type Si wafers to investigate the effect of In composition in the quaternary nitride layer on the electrical performance of Al2O3/AlInGaN/GaN-based normally-ON metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). From the comparative study of the electrical measurements, it was observed that the transport properties of the devices were relatively poor in the presence of higher In composition in the quaternary-N layer. The deterioration of the electrical characteristics of MIS-HEMTs originated from the formation of deep pits on the AlInGaN epilayer surface caused by the segregation of In atoms during epitaxial growth. However, the formation of such pits was reduced for the quaternary epilayer with lower In content and exhibited better transport performance. A maximum current density (Id,max) of 780 mA/mm with a specific ON-resistance of 0.71mΩcm2 was observed for the device fabricated on the wafer with an In composition of 9% in the AlInGaN epilayer. We have achieved a high breakdown voltage of 793 V with a device with the gate-to-drain distance (Lgd) of 20μm under the off-state condition.

A Temperature Stable Amplifier Characteristics of AlGaN/GaN HEMTs on 3C-SiC/Si

“…In the field of high power and high frequency semiconductor device technologies, gallium nitride (GaN) has emerged as one of the most promising candidates for the past decades because of its high breakdown field and the high electron saturation velocity [1]- [3]. A high sheet career density of 2 dimensional electron gas (2DEG) is formed at AlGaN/GaN interface due to the piezoelectric and spontaneous polarization, which makes AlGaN/GaN heterostructure high electron mobility transistors (HEMTs) highly suitable for the above high frequency and high power electronics applications [4].…”

Investigation of Three‐Channel Heterostructure and High‐Electron‐Mobility Transistor with Quaternary In0.1Al0.5Ga0.4N Barrier

“…[11,12] However, the difficulties in the epitaxial growth process remain the main challenges of such heterostructures. [13][14][15] Therefore, quaternary nitrides have been proposed to alleviate the immiscibility between AlN and InN. The presence of Ga can promote In incorporation into the barrier and improve the crystal quality.…”

“…[16] Meanwhile, quaternary InAlGaN with a suitable Al/In ratio can also be lattice matched with GaN and achieve a high carrier density because of the high-Al-content barrier. [17,18] Despite the potential advantages of quaternary nitride compounds, few studies of the lattice-matched multichannel heterostructure with the InAlGaN barrier have been reported until now.…”

Numerical study of T-Gate AlGaN/AlInGaN/GaN MOSHEMT with Single and Double Barrier for THz Frequency Applications

“…To further optimize 2DEG confinement in the channel region, an Al0.80In0.18GaN second barrier layer with high aluminum/indium content is placed between the AlGaN first barrier and the Al 0.36 In 0.08 GaN spacer (as shown in Figure 1(b)). The calculated Al, In, and Ga composition for the AlInGaN materials ensures lattice-matching with the GaN channel, promoting superior transport performance [28]. These studied structures are grown on a preferred substrate of silicon carbide (4H-SiC).…”