Effect of In-Incorporation and Annealing on CuxSe Thin Films

Abstract

A study of indium-incorporated copper selenide thin-film deposition on a glass substrate using the successive ionic adsorption and reaction method (SILAR) and the resulting properties is presented. The films were formed using these steps: selenization in the solution of diseleniumtetrathionate acid, treatment with copper(II/I) ions, incorporation of indium(III), and annealing in an inert nitrogen atmosphere. The elemental and phasal composition, as well as the morphological and optical properties of obtained films were determined. X-ray diffraction data showed a mixture of various compounds: Se, Cu0.87Se, In2Se3, and CuInSe2. The obtained films had a dendritic structure, agglomerated and not well-defined grains, and a film thickness of ~90 μm. The band gap values of copper selenide were 1.28–1.30 eV and increased after indium-incorporation and annealing. The optical properties of the formed films correspond to the optical properties of copper selenide and indium selenide semiconductors.

Environment-friendly copper-based chalcogenide thin film solar cells: status and perspectives

“…51,52,[65][66][67][68][69][70][71][72][73][74][75][76][77] general optical bandgaps of CuS (B2.0 eV) are higher compared to CuSe (B1.8 eV) due to decreasing the electron carrier density. [53][54][55] Se is naturally more reactive and sensitive compared to S. Therefore, it is a bit challenging to form a stable phase of CuSe. However, CuS possesses a higher bandgap that may limit its application.…”