Effect of In incorporation on optical properties of amorphous Se–Ge thin films

Pandey, V.; Tripathi, S. K.; Kumar, Anjani

doi:10.1016/j.physb.2006.05.427

Cited by 21 publications

(8 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Alloying of amorphous selenium (a-Se) with Sb has been reported to significantly improve mechanical robustness, raise crystallization temperature, enhance conductivity and reduce aging effects as compared to pure a-Se [3,8]. Selenium-based alloys with high Sb content are reported to have ultrafast crystallization rates (as low as 8 ps laser pulses) [9].…”

Section: Introductionmentioning

confidence: 99%

Chemical bond approach to optical properties of some flash evaporated Se_100−XSb_Xchalcogenide alloys

Muiva

Sathiaraj

Mwabora

2012

Eur. Phys. J. Appl. Phys.

View full text Add to dashboard Cite

Amorphous thin films of Se100−X SbX (X = 1, 5, 10, 15 and 20) were synthesized by flash evaporation of the premelt quenched bulk samples. The optical properties were investigated from spectrophotometric measurements in the UV-VIS-NIR spectral region using Swanepoel's standard envelope method and related techniques. The optical band gap energy (E opt g) was evaluated from the Wemple-Didomenico (WDD) single oscillator model and Tauc's extrapolation method in the region where the absorption coefficient, α ≥ 10 4 cm −1. The observed values of E opt g and oscillator energy Eo were found to decrease monotonously with increasing Sb additive. The complex dielectric constant (ε), Urbach energy (Eu), optical conductivity (σ), plasma frequency (ωp) and lattice dielectric constant (εL) were deduced for each alloy composition. The complex refractive index (n) fitted well to Sellmeier function which can allow extrapolation of n outside the measured spectral range. The observed changes in optical parameters with Sb content were explained on the basis of increased defect states and changes in cohesive energy indicators (average heat of atomization (H s), mean coordination number Z and average single bond energy (Hs/ Z).

show abstract

Section: Introductionmentioning

confidence: 99%

Chemical bond approach to optical properties of some flash evaporated Se_100−XSb_Xchalcogenide alloys

Muiva

Sathiaraj

Mwabora

2012

Eur. Phys. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…It is found that the properties of this class of amorphous material are usually affected by the addition of impurities as a third element. Recently a lot of attention has been paid to achieve the influence of impurities on the physical properties of chalcogenides [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films

et al. 2011

View full text Add to dashboard Cite

The ac conductivity and dielectric properties of Ge 15 Se 60 X 25 (X = As or Sn) thin films are reported in this paper. The thin films were deposited by thermal evaporation at 10 −5 Torr pressure. The films were well characterized by X-ray diffraction, differential thermal analysis and energy dispersive X-ray spectroscopy. The ac conductivity was measured over temperature range 303-413 K and frequency range 10 2 -10 5 Hz. The frequency dependence of the ac conductivity was found to be linear with slope which lies very close to unity and is independent of temperature. This behavior can be explained in terms of the correlated barrier hopping between centers forming intimate valence alternation pairs. Values of the dielectric constant ε 1 were found to decrease with frequency and increase with temperature. The maximum barrier height W m for each sample, which was calculated from the dielectric measurements according to the Guinitin equation, agrees with the theory of hopping of charge carriers over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized state near the Fermi level was estimated for the studied films.

show abstract

“…of the investigated samples. [28,29]. Therefore, an impurity band must exist within the mobility gap, which determines the activation energy and gives an indication that the Fermi level is presumably displaced from the center of the mobility gap towards the valence band.…”

Section: Electrical Conductivitymentioning

confidence: 99%

Optical and Electrical Properties of the Ge10 Inx Se(90-x) Amorphous Thin Film

2017

Egypt. J. Physics

View full text Add to dashboard Cite

Effect of In incorporation on optical properties of amorphous Se–Ge thin films

Cited by 21 publications

References 23 publications

Chemical bond approach to optical properties of some flash evaporated Se_100−XSb_Xchalcogenide alloys

Chemical bond approach to optical properties of some flash evaporated Se_100−XSb_Xchalcogenide alloys

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films

Optical and Electrical Properties of the Ge10 Inx Se(90-x) Amorphous Thin Film

Contact Info

Product

Resources

About

Effect of In incorporation on optical properties of amorphous Se–Ge thin films

Cited by 21 publications

References 23 publications

Chemical bond approach to optical properties of some flash evaporated Se100−XSbXchalcogenide alloys

Chemical bond approach to optical properties of some flash evaporated Se100−XSbXchalcogenide alloys

Ac Conductivity and Dielectric Properties of Amorphous Ge15Se60X25( X = As or Sn) Films

Optical and Electrical Properties of the Ge10 Inx Se(90-x) Amorphous Thin Film

Contact Info

Product

Resources

About

Chemical bond approach to optical properties of some flash evaporated Se_100−XSb_Xchalcogenide alloys

Chemical bond approach to optical properties of some flash evaporated Se_100−XSb_Xchalcogenide alloys

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films