Effect of indium concentration on the structural and electrical properties of Al-doped ZnO thin films grown by pulsed laser deposition

Abstract

The Al-doped ZnO (AZO) films doped with different indium concentrations were grown on glass substrates (Corning 1737) at 200 °C by pulsed laser deposition. Indium doping in AZO films shows a critical effect on the crystallinity, resistivity and optical properties of the films. The AZO films doped with 0.3 atom% indium content exhibit the highest crystallinity, the lowest resistivity of 4.5 × 10−4 Ω cm and the maximum transmittance of 93%. The crystallinity of the indium doped-AZO films is strongly related to the resistivity of the films. The carrier concentration in the indium doped-AZO films linearly increases with increasing indium concentration. The mobility of the AZO films with increasing indium concentration was reduced with an increase in the carrier concentration and the decrease in mobility was attributed to the ionized impurity scattering mechanism. In optical transmittance, the shift of the optical absorption edge to a shorter wavelength strongly depends on the electronic carrier concentration in the films. The figure of merit FTC used for evaluating transparent electrodes reached 0.32 Ω−1 at 550 nm wavelength.

Properties of indium doped nanocrystalline ZnO thin films and their enhanced gas sensing performance

“…5(a) 37,38 It is well known that ZnO is intrinsically ntype owing to donor defects such as oxygen vacancies and zinc interstitials. It is found that, indium doping markedly improved the carrier concentration and conductivity, and also indicated n-type behavior for all the grown lms.…”

Variations in electrical and physical properties of Al:ZnO films with preparation conditions

“…/cm 3 to 10.5 × 10 20 /cm 3 by a multiple of 0.1 ± 0.03. This suggests that the oxygen vacancies are ionized with a probability factor of 0.1 ± 0.03, which indicates a shift in the Fermi level [14][15][16][17][18].…”

Electrical and structural properties of multicomponent transparent conducting oxide films prepared by co-sputtering of AZO and ITO

“…As the ITO power increased from 0 to 30 W, the location of the diffraction peak shifted to a lower angle and the peak intensity significantly decreased. It is considered that the mixing of ITO into AZO induces the lattice distortion because In 3+ ionic radius (0.081 nm) is larger than Zn 2+ (0.072 nm) [15]. Glancing incidence XRD (GIXRD) analysis in 2θ mode was carried out in order to obtain the structural information of the AZO-ITO thin films with a little crystallinity.…”