Effect of indium-flush method on the control of photoluminescence energy of highly uniform self-assembled InAs quantum dots by slow molecular beam epitaxy growth

Sasakura, H.; Kayamori, Shingo; Adachi, S.; Muto, Shunichi

doi:10.1063/1.2752598

Cited by 24 publications

(16 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In-flush technology [7], growing QDs in a quantum well forming a so called dots-in-a-well structure [8], and growing QDs on some high miller index surfaces [9]. Despite the fact that the optical line width of QDs with a multimodal size distribution is several times larger than that of QDs within one size ensemble, few works have been conducted in studying the growth dynamic of QDs with a multimodal size distribution which leads to a very controversial understanding of the QD with a multimodal size distribution [10,11].…”

Section: Introductionmentioning

confidence: 99%

Suppressing the multimodal size distribution of InAs/GaAs quantum dots through flattening the surface fluctuation

Wang

et al. 2010

Sci. China Phys. Mech. Astron.

View full text Add to dashboard Cite

A method of suppressing the multimodal size distribution of InAs/GaAs quantum dots (QDs) using molecular beam epitaxy through flattening the substrate surface is reported in this work. It is found that the surface roughness plays an important role in the growth of QDs through continuous surface evolution (SEQDs). SEQDs are the main components of small QD ensemble in QDs with multimodal size distribution. It is suggested that most of the SEQDs are very likely to nucleate during the growth interruption rather than during the deposition. The growth of QDs on a smoother surface has largely reduced the density of SEQDs. The photoluminescence line width of uniform QDs is found to be only 17 meV at a low temperature. quantum dots, multimodal, surface fluctuation PACS: 68.35.bg, 73.21.La, 68.55.-a

show abstract

Section: Introductionmentioning

confidence: 99%

Suppressing the multimodal size distribution of InAs/GaAs quantum dots through flattening the surface fluctuation

Wang

et al. 2010

Sci. China Phys. Mech. Astron.

View full text Add to dashboard Cite

show abstract

“…14) The observed intensities of the X line in each configuration were almost identical, signifying that the present system that uses flakes sandwiched between SMF patch cables naturally forms a spatial Hanbury Brown and Twiss (HBT) interferometer without an additional bifurcation. Note that non-degraded PL spectra are also observed after three months with ten thermal cycles from 4.2 K to 300 K.…”

Section: /8mentioning

confidence: 70%

Fiber-Based Bidirectional Solid-State Single-Photon Emitter Based on Semiconductor Quantum Dot

Sasakura

Liu

Odashima

et al. 2013

Appl. Phys. Express

View full text Add to dashboard Cite

Fiber-based bidirectional photon detection from nanoscale emitters and photon antibunching behavior between two outputs of two single-mode fibers (SMFs) are experimentally demonstrated. Flakes containing the epitaxially grown quantum dots (QDs) are mechanically fixed by both sides with the edge faces of the SMF patch cables. The emitting photons from a single QD are directly taken out of both sides through the SMFs. Single-photon emission between two SMF outputs is confirmed by detecting nonclassical antibunching in second-order photon correlation measurements. This simple optomechanical alignment-free single-photon emitter is advantageous because of its robust stability of more than three months and low-cost fabrication.Semiconductor quantum dots (QDs) are attractive nanoscale structures for solid-state nonclassical light sources and are expected to play key roles in a quantum information network. 1-3) Above all, single QDs fabricated by epitaxial growth can serve as stable and bright photon emitters. Recently, significant progress of far-field optical coupling to a single semiconductor QD has been achieved by the Purcell effects with elaborated microcavity structures. [4][5][6][7][8][9] However, direct coupling of emitted photons to single-mode fiber (SMF) without exposure to the free-space, air or vacuum, is preferable for future applications. Indeed, various efforts have been made to directly couple a nanoscale photon emitter with a conventional SMF from the perspective of consistency with an existing optical fiber infrastructure. Several groups reported the efficient extraction of photons from a nanoscale emitter directly into an optical fiber by using a tapered fiber, 10) nanophotonic directional coupler, 11) integration of telluride fiber, 12) and direct placing on the fiber facet by an atomic force microscope. 13) In these approaches, no optical loss occurred at coupling from the free-space into optical fibers. From a scientific as well as engineering viewpoint, the long-term stability is another of the most important conditions for a nanoscale photon emitter.This study reports a simple fabrication of a bidirectional solid-state single-photon emitter based on epitaxially grown InAs QDs, which has a long-term stability and also a high po- * E-mail address: hirotaka@cris.hokudai.ac.jp 1/8Submitted to Applied Physics Express We used a fiber-pigtailed laser diode (Thorlabs, LPS-830-FC) that emits at 830 nm as an excitation source with the laser beam arriving at the flakes from the right side of the SMF.To clean up laser spectral noise, a long-pass filter and two short-pass filters were inserted into the laser beam (Thorlabs, FEL0800 and FES0850, respectively). The QD emissions were extracted using two SMFs, corresponding to the reflection (right side) and transmission (left side) configurations in the free-space optical measurement system. To spatially separate the emissions in the reflection direction, a fiber-based dichroic beamsplitter module (Optoquest, custom-made product) was used. The emission was dis...

show abstract

“…The main peak is near 750 nm, which is optimum for the single dot spectroscopy. The full width at half maximum (FWHM) is 163.6 meV, which is much wider than 30-40 meV of our typical InAs QDs [17]. Fig.…”

Section: Methodsmentioning

confidence: 97%

Effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots grown on GaAs by molecular beam epitaxy

Izumi

Koyama

et al. 2011

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

The effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots (QDs) grown on GaAs by molecular beam epitaxy (MBE) were studied, with an emphasis on their use for single QD spectroscopy. The effects of substrate temperature and growth rate on the density and size were found to be quite similar to those of InAs QDs on GaAs.The effect of coverage, however, was different. Although the density was relatively high as compared to that of InAs QDs, it was reduced to 1 × 10 10 cm -2 under an optimized condition. This density is compatible with single QD spectroscopy with the help of a certain nanofabrication technique for areal restriction.

show abstract

Effect of indium-flush method on the control of photoluminescence energy of highly uniform self-assembled InAs quantum dots by slow molecular beam epitaxy growth

Cited by 24 publications

References 20 publications

Suppressing the multimodal size distribution of InAs/GaAs quantum dots through flattening the surface fluctuation

Suppressing the multimodal size distribution of InAs/GaAs quantum dots through flattening the surface fluctuation

Fiber-Based Bidirectional Solid-State Single-Photon Emitter Based on Semiconductor Quantum Dot

Effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots grown on GaAs by molecular beam epitaxy

Contact Info

Product

Resources

About