2021
DOI: 10.1016/j.optmat.2020.110560
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Effect of indium incorporation, stimulated by UHV treatment, on the chemical, optical and electronic properties of ZnO thin film

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Cited by 24 publications
(10 citation statements)
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“…On the basis of these results, we suggest that the binding energy of 3d5/2 and 3d3/2 of indium in Fig. 3D correspond to electron states related to chemical species of In-O-Zn type in agreement with reported results [34]. The calculation of (At% composition) of different elements of UZO and IZO (4% In) and IZO (6% In) are shown in table 2.…”
Section: X -Ray Photoemission Spectroscopy Of Uzo Compared To Izo Aft...supporting
confidence: 88%
“…On the basis of these results, we suggest that the binding energy of 3d5/2 and 3d3/2 of indium in Fig. 3D correspond to electron states related to chemical species of In-O-Zn type in agreement with reported results [34]. The calculation of (At% composition) of different elements of UZO and IZO (4% In) and IZO (6% In) are shown in table 2.…”
Section: X -Ray Photoemission Spectroscopy Of Uzo Compared To Izo Aft...supporting
confidence: 88%
“…46 Figure 2c demonstrates the band diagram assuming that the presence of MWCNT does not affect the conduction band edge tremendously, and the band gap of the composite is approximated to that of the pristine ZnO samples and the electrical characteristics are presented in Figure S3. 47 The position of the Fermi level close to the conduction band edge signifies the n-type conduction behavior of the composite; thereby, the availability of a huge number of charge carriers at the conduction band. The right-hand side image shows the work function of gold compared to that of the composite suggesting a Schottky type contact formation between the metal and the semiconductor.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…The violet emission at 420 nm (Peak 2) can be attributed to either a transition (Zn i → VB) ~418 nm or (CB → V Zn ) ~427 nm. The emission peaks 3 and 4 correspond to an electron captured at the extended ex-Zn i recombining with a hole from VB, as several authors associated these transitions with emission at 440–460 nm [ 71 , 72 , 73 , 74 ]. Another possibility could be a recombination of an electron from Zn i level with a hole from the V Zn level, which results in an emission of about 460 nm (Peak 3).…”
Section: Resultsmentioning
confidence: 99%
“…V. Kumar et al [ 81 ] located the V o at ~1.85 eV below the CB resulting in a red emission of 760 nm (Zn i → V o ). M. Bedrouni et al [ 73 ] reported on PL emission of ZnO thin film and showed attributed the red emission to the following transitions CB → V o , V o → VB or H i → V o . It is important to mention that the existence of oxygen vacancies is supported by XPS findings where a signature of these defects is found after deconvolution of the high-resolution oxygen peak.…”
Section: Resultsmentioning
confidence: 99%