2018
DOI: 10.1002/pssa.201800481
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Effect of Inductively Couple Plasma‐Based Oxygen Plasma Treatment on AlGaN/GaN HEMT

Abstract: In this paper, the physical mechanism and trap effect of AlGaN/GaN high electron mobility transistor HEMT with inductively couple plasma (ICP) based oxygen plasma treatment are investigated. Three devices with different oxygen plasma treatment conditions are fabricated and compared to a conventional device. To understand the physical mechanism of oxygen plasma treatment by ICP, the chemical composition change of the barrier layer is studied through X-ray photoelectron spectroscopy (XPS) and transmission electr… Show more

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Cited by 5 publications
(2 citation statements)
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“…[ 3 ] Nb‐doped SnO 2 are also mentioned revealing high mobility values and high conductivity values that make them attractive for electro‐optical applications especially as photoelectric devices. [ 4 ] The transparency of Nb‐doped SnO 2 films is ≈79% making them also preferred as conducting optical windows. [ 4 ] Moreover Nb‐doped SnO 2 is found having potential for use as electron transport layer in perovskite solar cells.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…[ 3 ] Nb‐doped SnO 2 are also mentioned revealing high mobility values and high conductivity values that make them attractive for electro‐optical applications especially as photoelectric devices. [ 4 ] The transparency of Nb‐doped SnO 2 films is ≈79% making them also preferred as conducting optical windows. [ 4 ] Moreover Nb‐doped SnO 2 is found having potential for use as electron transport layer in perovskite solar cells.…”
Section: Introductionmentioning
confidence: 99%
“…[ 4 ] The transparency of Nb‐doped SnO 2 films is ≈79% making them also preferred as conducting optical windows. [ 4 ] Moreover Nb‐doped SnO 2 is found having potential for use as electron transport layer in perovskite solar cells. [ 5 ] They increased the performance of the solar cells by more than 62%.…”
Section: Introductionmentioning
confidence: 99%