Effect of inline dose and focus monitoring and control on post-etch CD

Dinu, Berta; Subramony, Venkatram; Lim, Pei Chin; Goh, Dawn; Eichelberger, Brad; Chew, Kwong Boo; Monahan, Kevin M.

doi:10.1117/12.535241

Cited by 3 publications

(2 citation statements)

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“…Simultaneous focus and exposure control in lithography is effective for CD control [5][6][7][8] . We tried to apply scatterometry to CD control by utilizing the ability of 2D profile monitoring.…”

Section: Application For Advanced Process Controlmentioning

confidence: 99%

Usage of profile information obtained with scatterometry

et al. 2005

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Scatterometry, a non-destructive optical metrology, provides information on cross-sectional pattern profiles, including pattern height, sidewall angle and linewidth. Compared with other non-destructive metrology tools, such as the atomic force microscope (AFM) and CD-SEM, scatterometry offers the advantages of high throughput and superior repeatability. We have applied scatterometry to the monitoring of the depth of Shallow Trench Isolation (STI) for the analysis of complicated stack. We obtained sufficient measurement accuracy by optimizing a model.In addition, we propose the application of scatterometry to post-lithography monitoring for advanced process control (APC). A regression model was established to derive effective dose and focus from the change of photoresist profile monitored by means of scatterometry. In our experiment using an ArF scanner, we obtained sufficient measurement repeatability of dose and focus.

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Section: Application For Advanced Process Controlmentioning

confidence: 99%

Usage of profile information obtained with scatterometry

et al. 2005

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“…Recent publications have focused on creating focus and dose response models from FEM experiments, then applying those models to standard production conditions for continuous dose and focus monitoring. One method uses an optical imaging technique to measure line-end shortening (LES) 6,7,8,9 patterns. This method does show promising focus sensitivity, but it requires special test structures and does not provide the precise magnitude and direction of change information that would be required for making immediate corrections.…”

Section: Existing Focus Control Techniquesmentioning

confidence: 99%

Lithography process control using scatterometry metrology and semi-physical modeling

et al. 2007

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In this paper, results and analysis are presented from Advanced Micro Devices' (AMD) efforts at calculating lithography dose and focus parameters using scatterometry metrology and semi-physical CD models. The system takes advantage of the accurate and precise top and bottom CD data produced by scatterometry to differentiate dose and focus variation. To build the lithography process model, scatterometry data is generated for each field of a focus-exposure matrix (FEM) wafer, and the resulting top and bottom CD data is used to fit the parameters of series expansions relating CD to dose and focus. When new CD data is generated, the models can be inverted to solve for dose and focus independently. Our methodology employs a flexible modeling and inversion approach in an attempt to make the technique applicable to any production film stack and any line spacing regime. The quality of the inversion results are highly correlated to the degree of focus observability present in the system. Our results will show how a series of litho process with varied film stacks and line/space ratios respond to this technique, and we will report some best practices for a variety of use cases ranging from equipment characterization to focus monitoring on product.

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Focus and Dose Measurement Method in Volume Production

Ina

Oishi

Sentoku

2005

Jpn. J. Appl. Phys.

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Firstly, this paper establishes the inverse kinematic model of a new coordinate measuring machine (CMM) based on the parallel-link mechanism with three spatial degrees of freedom (3DOFs). Then, based on the differentiation of the kinematics, the relation between the input parameter errors, which consist of the position errors of the joints and the kinematic errors of the actuators, and the output errors at the probe of the new CMM, is derived; thereby the error model is presented. Finally, the error model is verified by computer simulation, and the result indicates that the error model established in this paper can approximately report the changing trend of the actual measuring errors where the input errors are small enough. This research provides an essential theoretical basis for calibrating the new parallel-link CMM.

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Effect of inline dose and focus monitoring and control on post-etch CD

Cited by 3 publications

References 0 publications

Usage of profile information obtained with scatterometry

Usage of profile information obtained with scatterometry

Lithography process control using scatterometry metrology and semi-physical modeling

Focus and Dose Measurement Method in Volume Production

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