Effect of insertion losses on millimeter-wave SIW filters using LTCC technology

Hizan, Hizamel M.; Ambak, Zulkifli; Ibrahim, Adnan; Yusoff, Mohd Zulfadli Mohamed; Kanesan, Thavamaran

doi:10.1109/rfm.2015.7587714

Cited by 4 publications

(4 citation statements)

References 7 publications

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“…The measurement uncertainty was below 5%, and error bars are represented by size of the measurement points. As can be observed, the UV illumination significantly emphasized the sensor response in terms of both magnitude and phase for low gas concentrations, in contrast to previously reported results, in which only the reflection coefficient's phase was affected [37]. However, this effect decreased for higher concentrations, for which an emphasis was not required.…”

Section: Gas-sensing Characteristics For Continouse Uv Radiationcontrasting

confidence: 77%

“…As was shown in [30], the above described SnO 2 layer changes its permittivity in the microwave frequency range when exposed to acetone. This phenomenon has been used for indirect acetone concentration measurement with the use of the microwave measurement system reported in [37], operating at a frequency of 2.4 GHz. This system is composed of a microwave sensor with the SnO 2 as a gas-sensing layer and a dedicated five-port reflectometer for measuring the sensor's response.…”

Section: Microwave Measurementsmentioning

confidence: 99%

“…As a result, such a sensor configuration doubles the impact of the permittivity change on the measured reflection coefficient. To obtain good measurement quality, the reflection coefficient measurement was realized with the use of the recently developed five-port reflectometer [37]. It exhibited significantly enhanced measurement uncertainty for the reflection coefficient's range, corresponding to the utilized sensor's reflection coefficient (magnitude equal to 0.8 ± 0.2 and phase equal to 180 • ± 15 • ) [37], with respect to the classic reflectometers optimized for all reflection coefficients (magnitude not exceeding 1, arbitrary phase).…”

Section: Microwave Measurementsmentioning

confidence: 99%

“…To obtain good measurement quality, the reflection coefficient measurement was realized with the use of the recently developed five-port reflectometer [37]. It exhibited significantly enhanced measurement uncertainty for the reflection coefficient's range, corresponding to the utilized sensor's reflection coefficient (magnitude equal to 0.8 ± 0.2 and phase equal to 180 • ± 15 • ) [37], with respect to the classic reflectometers optimized for all reflection coefficients (magnitude not exceeding 1, arbitrary phase). It consisted of a five-port passive power distribution network, signal source, and three microwave power detectors, the readings of which were translated to the measured complex reflection coefficient.…”

Section: Microwave Measurementsmentioning

confidence: 99%

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Nanodevices for Microwave and Millimeter Wave Applications

Huynen¹

2020

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Initially inspired by the work of Richard Feynman in 1959 during his famous talk "There is plenty of room at the bottom", nanoscience and nanotechnology have moved during the 2000s from laboratory developments to daily life applications. The nanoworld, as understood today, is at the frontier between the level of atoms and molecules, governed by quantum physics and the macroworld where materials have bulk properties resulting from the assembly of billions of atoms.In this context, I am pleased as a Guest Editor to introduce this Special Issue focused on the interaction between nanoscale dimensions and centimeter to millimeter wavelengths. Such interaction is efficient for the design and fabrication of devices showing enhanced performances. This issue includes seven novel contributions in the field. The applications cover electronics, sensors, signal processing through amplification and the switching, mixing and broadcasting of signals, all exploiting nanoscale/nanotechnology at microwave and millimeter waves.Heredia et al.[1] presented a frequency-reconfigurable 130nm SiGe:C BiCMOS, very compact Low Noise Amplifier (LNA) in the range 120-140 GHz. The LNA design is based on an Heterojunction Bipolar Transistor (HBT)-based switch instead of a RF-MEMS switch. A systematic procedure was applied to design the input-, inter-stage-and output-matching networks in order to obtain a perfectly balanced gain and noise figure at both frequency states. The measured gain and noise figures were 14.2/14.2 dB and 8.2/8.2 dB at 120/140 GHz, respectively, in very good agreement with circuit/electromagnetic co-simulations.In [2] Rydosz et al. proposed a microwave gas sensor based on a 250 nm-tick SnO 2 film. Its sensitivity to acetone was improved by applying UV illumination, which emphasized the sensor's response to lower gas concentrations. As a result, detection was obtained for a wide range of gas concentrations. Various experimental conditions were tested. The highest sensitivity was obtained for a UV (375 nm) current of 10 mA at a continuous wave.In [3] Tripon-Canseliet et al. achieved the microwave extraction of the electrical impedance of vertically aligned multi-wall carbon nanotube (VA MWCNT) bundles/forests grown on a silicon substrate. Dedicated resonating devices were designed for antenna application, operating around 10 GHz and benefiting from a natural inductive/capacitive behavior or complex conductivity in the microwave domain. As obtained from the S-parameter measurements, the capacitive and inductive behaviors of VA MWCNT bundles were deduced from the device frequency resonance shift.Van Kerckhoven et al. [4] developed and compared two laser-assisted processes for the fabrication of microwave devices based on metallic nanowire arrays loaded inside porous alumina templates, allowing the realization of substrate integrated waveguide (SIW)-based devices. A nanowired SIW was firstly presented. It operated between 8.5 and 17 GHz, corresponding to the first and second cut-off frequencies of the waveguide, respectively. ...

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Section: Gas-sensing Characteristics For Continouse Uv Radiationcontrasting

confidence: 77%

Section: Microwave Measurementsmentioning

confidence: 99%

Section: Microwave Measurementsmentioning

confidence: 99%

Section: Microwave Measurementsmentioning

confidence: 99%

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Nanodevices for Microwave and Millimeter Wave Applications

Huynen¹

2020

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Research of SIR filter based on integrated passive device technology

Zhang

Ming

et al. 2017

2017 18th International Conference on Electronic Packaging Technology (ICEPT)

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Fabrication of Microwave Devices Based on Magnetic Nanowires Using a Laser-Assisted Process

2019

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This paper compares two laser-assisted processes developed by the authors for the fabrication of microwave devices based on nanowire arrays loaded inside porous alumina templates. Pros and cons of each process are discussed in terms of accuracy, reproducibility and ease of fabrication. A comparison with lithography technique is also provided. The efficiency of the laser-assisted process is demonstrated through the realization of substrate integrated waveguide (SIW) based devices. A Nanowired SIW line is firstly presented. It operates between 8.5 and 17 GHz, corresponding to the first and second cut-off frequency of the waveguide, respectively. Next, a Nanowired SIW isolator is demonstrated. It shows a nonreciprocal isolation of 12 dB (corresponding to 4.4 dB/cm), observed in absence of a DC magnetic field, and achieved through an adequate positioning of ferromagnetic nanowires inside the waveguide cavity.

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Effect of insertion losses on millimeter-wave SIW filters using LTCC technology

Cited by 4 publications

References 7 publications

Nanodevices for Microwave and Millimeter Wave Applications

Nanodevices for Microwave and Millimeter Wave Applications

Research of SIR filter based on integrated passive device technology

Fabrication of Microwave Devices Based on Magnetic Nanowires Using a Laser-Assisted Process

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