Articles you may be interested inInfluence of polarization induced electric fields on the wavelength and the refractive index of intersubband transitions in AlN/GaN coupled double quantum wells J. Appl. Phys. 105, 093109 (2009); 10.1063/1.3124373 Near-infrared two-color intersubband transitions in AlN/GaN coupled double quantum wells Refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides J. Appl. Phys. Influence of applied electric fields on the absorption coefficient and subband energy distances of intersubband transitions in AlN/GaN coupled double quantum wells J. Appl. Phys.In the present paper, the linear and nonlinear optical absorption coefficients and refractive index changes between the ground and the first excited states in double GaN/Al x Ga (1Àx) N quantum wells are studied theoretically. The electronic energy levels and their corresponding wave functions are obtained by solving Schr€ odinger-Poisson equations self-consistently within the effective mass approximation. The obtained results show that the optical absorption coefficients and refractive index changes can be red-and blue-shifted through varying the left quantum well width and the aluminum concentration x b2 of the central barrier, respectively. These structural parameters are found to present optimum values for carrying out the transition of 0.8 eV (1.55 lm). Furthermore, we show that the desired transition can also be achieved by replacing the GaN in the left quantum well with Al y Ga (1Ày) N and by varying the aluminum concentration y Al . The obtained results give a new degree of freedom in optoelectronic device applications such as optical fiber telecommunications operating at (1.55 lm). V C 2015 AIP Publishing LLC. [http://dx.