2019
DOI: 10.1002/pssb.201800758
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Effect of Intense Laser Field in Gaussian Quantum Well With Position‐Dependent Effective Mass

Abstract: In this paper, the effects of the intense laser field (ILF) and position dependent mass (PDM) on the electronic structure in a Gaussian quantum well are theoretically deduced by using the diagonalization method for obtaining energy levels and corresponding wave functions. We find that, in the case of narrow PDM distribution, the dependence of the energy levels on the effective length of the electron mass distribution becomes more apparent, and the evolution of the dressed mass with ILF is significant. Given th… Show more

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Cited by 14 publications
(4 citation statements)
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“…It is important to highlight that among the reasons that have motivated us to choose this model of effective mass that decreases with the absolute value of the z-coordinate and that presents the same GaAs effective mass at point z = 0 are the following: (i) it is a model where the spatial dependence of the effective mass adapts very well to the profile of the probability density for the ground state, and (ii) it is an effective mass model that gives a very good account of the presence of singularities in the confinement potential. Sari et al have used a model with Gaussian mass distribution in quantum wells and quantum dots with Gaussian-like confinement potential [24,25]. It is well known that in a model of effective mass theory, a direct connection can be established between the electron effective mass and the gap energy of the respective semiconductor.…”
Section: Theoretical Frameworkmentioning
confidence: 99%
“…It is important to highlight that among the reasons that have motivated us to choose this model of effective mass that decreases with the absolute value of the z-coordinate and that presents the same GaAs effective mass at point z = 0 are the following: (i) it is a model where the spatial dependence of the effective mass adapts very well to the profile of the probability density for the ground state, and (ii) it is an effective mass model that gives a very good account of the presence of singularities in the confinement potential. Sari et al have used a model with Gaussian mass distribution in quantum wells and quantum dots with Gaussian-like confinement potential [24,25]. It is well known that in a model of effective mass theory, a direct connection can be established between the electron effective mass and the gap energy of the respective semiconductor.…”
Section: Theoretical Frameworkmentioning
confidence: 99%
“…Among the broad spectrum of applications [14][15][16][17][18][19], the study of heterostructures has been one particularly standing out [20][21][22][23]. Quantum dots (microscopic structures in which the electrons dynamics are strongly restricted in space) can be modelled by considering charge carriers with position-dependent masses [20,[24][25][26][27]. The electronic and optical properties of these nanostructures can be engineered and fine tuned by changing their size and shape [28][29][30][31][32].…”
Section: Introductionmentioning
confidence: 99%
“…In materials such as heterostructures, the particles in the materials possess position-dependent effective mass (PDM) caused DOI: 10.1002/andp.202300363 by the unique fabrication of the material. [1][2][3][4][5][6][7][8][9][10][11] Heterostructures are composite materials composed of distinct layers of different semiconductor materials stacked together with precise control at the atomic level. These structures are widely used in various electronic and optoelectronic devices due to their unique properties, such as bandgap engineering and confinement effects.…”
Section: Introductionmentioning
confidence: 99%