Effect of intense terahertz laser and magnetic fields on the binding energy and the transition energy of shallow impurity in a bulk semiconductor

Wang, Weiyang; Xu, Long; Wu, Bo; Zhang, Sha; Wei, Xiaojun

doi:10.1016/j.physb.2017.06.068

Cited by 9 publications

(3 citation statements)

References 26 publications

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“…Thus, we have to develop a new nonperturbative approach to deal with such a time-dependent problem, namely, one in which the laser field can be treated in a more exact way. Following the nonperturbative approach proposed previously [27,39,40], we use the time-dependent unitary transformation [27]…”

Section: A Nonperturbative Approachmentioning

confidence: 99%

“…Notice that theoretical approaches used previously, i.e., the so-called "dressed-band approach" [8,17,22,23] and the "dressed-atom approach" [18][19][20][21] are not valid in the Faraday configuration. Recently, we proposed a time-dependent nonperturbative approach to investigate the binding energy and transition energy for ground 1s-like and excited 2p − -like states in bulk semiconductors under the ITLFs and magnetic fields within the Faraday configuration [27].…”

Section: Introductionmentioning

confidence: 99%

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Magnetopolaron effect on shallow-impurity states in the presence of magnetic and intense terahertz laser fields in the Faraday configuration

et al. 2018

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The magnetopolaron effect on shallow-impurity states in semiconductors is investigated when subjected simultaneously to a magnetic field and an intense terahertz laser field within the Faraday configuration. We use a time-dependent nonperturbative theory to describe electron interactions. The externally applied fields are exactly included via a laser-dressed interaction potential. Through a variational approach we evaluate the binding energy of the shallow-impurity states. We find that the interaction strength of the laser-dressed Coulomb potential can not only be enhanced but also weakened by varying the two external fields. In this way, the binding energy can be tuned by the external fields and red-or blue-shifted with respect to the static binding energy. In the nonresonant polaron region, a magnetopolaron correction that includes the effects of photon process is observed. In the resonant polaron region, moreover, the resonant magnetopolaron effect accompanied by the emission and absorption of a single photon is distinctly observed. This can be modulated to be far away from the reststrahlen band. The intriguing findings of this paper can be observed experimentally and, in turn, provide a way to measure the strength of the electron-phonon interaction.

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Section: A Nonperturbative Approachmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Magnetopolaron effect on shallow-impurity states in the presence of magnetic and intense terahertz laser fields in the Faraday configuration

et al. 2018

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“…However, these previous studies were only focused on the Voigt configuration since the previous theoretical approaches, that is, the so‐called “dressed‐band approach” and the “dressed‐atom approach” are complete invalid in the Faraday configuration. Recently, we proposed a new time‐dependent nonperturbative approach to investigate the binding energy and resonant magnetopolaron effect accompanied by multiphoton process for shallow‐impurity states in bulk semiconductors under the ITLFs and magnetic fields within the Faraday configuration . However, to the best of our knowledge, there have been no reports on the nonlinear optical properties of a shallow impurity in semiconductors and related nanostructures under the ITLFs and magnetic fields within the Faraday configuration.…”

Section: Introductionmentioning

confidence: 99%

The Effects of Intense Terahertz Laser and Magnetic Fields on Optical Properties of a Shallow Impurity in Semiconductors in the Faraday Configuration

Wei

Wang

et al. 2018

Physica Status Solidi (b)

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The influence of intense terahertz laser and magnetic fields on the total optical absorption coefficient for the transitions between shallow‐impurity states 1s and 2p± in semiconductors within the Faraday configuration is studied by using the compact density‐matrix approach, where the energy levels and wave functions of shallow‐impurity states are obtained by using a combination of time‐dependent nonperturbative approach and variational method. We find that the transition energy of shallow‐impurity states and the dipole matrix element can be not only increased but also decreased by varying the external fields via laser‐dressed Coulomb potential. In this way, the saturable absorption and the resonant peak position and magnitude of the total optical absorption coefficient can be effectively tuned with an appropriate choice of the external fields. Moreover, an appreciable effect of cyclotron motion on the total optical absorption coefficient is observed. This gives new degree of freedom in various device applications based on the intradonor transition of electrons.

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The effects of hydrostatic pressure and temperature on photoionization cross section of impurities in semiconductors under magnetic and intense terahertz laser fields

Wang

Gong

et al. 2021

Optical Materials

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Effect of intense terahertz laser and magnetic fields on the binding energy and the transition energy of shallow impurity in a bulk semiconductor

Cited by 9 publications

References 26 publications

Magnetopolaron effect on shallow-impurity states in the presence of magnetic and intense terahertz laser fields in the Faraday configuration

Magnetopolaron effect on shallow-impurity states in the presence of magnetic and intense terahertz laser fields in the Faraday configuration

The Effects of Intense Terahertz Laser and Magnetic Fields on Optical Properties of a Shallow Impurity in Semiconductors in the Faraday Configuration

The effects of hydrostatic pressure and temperature on photoionization cross section of impurities in semiconductors under magnetic and intense terahertz laser fields

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