2010
DOI: 10.1063/1.3481801
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Effect of interfacial reactions between atomic-layer-deposited HfO2 films and n-GaAs (100) substrate using postnitridation with NH3 vapor

Abstract: Using a variety of various physical measurements, the effects of postnitridation annealing using NH3 vapor on the interface between atomic-layer-deposited HfO2 films and n-GaAs (100) substrates were investigated. After the nitridation treatment, from x-ray absorption spectroscopy and high resolution x-ray photoemission spectroscopy data indicate that the incorporation of Ga oxides into HfO2 films was significantly suppressed during the annealing treatment, primarily because of chemical reactions at the interfa… Show more

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