Effect of intermediate layer on resonance phonon transport

This review is devoted to describing nonequilibrium carrier systems and relaxational and kinetic phenomena in three-dimensional point-contacts. Attention is focused on describing a phonon system which becomes substantially modified under conditions of ballistic transport. In such systems the energy fluxes are limited by the presence of weakly coupled layers of impurity atoms, planar defects, or microscopic-size contacts. The small size of point-contacts, ranging from several to 1000 nm, makes it possible to investigate low-temperature heat and charge transfer on scales less than the characteristic inelastic scattering lengths. A mechanism of phonon transport in the presence of an interface is analyzed, and various models of a planar defect are examined. The special features of interfacial phonon transport, where the transport coefficients are determined not by scattering processes in the volume of a bulk crystal but rather by the properties of the intercrystalline boundary, are studied. The quantum phonon thermal conductivity of point-contacts is studied in detail.

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Effect of intermediate layer on resonance phonon transport

Cited by 2 publications

References 4 publications

Heat transfer—A review of 2004 literature

Heat transfer—A review of 2004 literature

Low-temperature phonon transport in 3D point-contacts (Review)

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