Effect of Internal Radiation on Heat Transfer during Ti:sapphire Crystal Growth Process by Heat Exchanger Method

Qi, Xin; Ma, Wencheng; Liu, Lijun

doi:10.1016/j.ijheatmasstransfer.2021.121000

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2024

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Cited by 13 publications

(1 citation statement)

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“…Its unique lattice structure, excellent mechanical properties, and good thermal properties make sapphire an ideal substrate material for semiconductor lighting, large-scale integrated circuits, and other fields, especially for light emitting diodes and diode lasers in the semiconductor industry. For the preparation of single large-diameter sapphire single crystals, the Kyropoulos (Ky) 4 method, Czochralski (Cz) 5 method or heat exchange method 6 are mainly used. The production of high quality sapphire single crystals is an important goal of the sapphire industry.…”

Section: Introductionmentioning

confidence: 99%

Unsteady melt heat flow coupling optimization method for sapphire crystal seeding growth by the Kyropoulos method

Qiao

Li³

et al. 2022

CrystEngComm

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Section: Introductionmentioning

confidence: 99%

Unsteady melt heat flow coupling optimization method for sapphire crystal seeding growth by the Kyropoulos method

Qiao

Li³

et al. 2022

CrystEngComm

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The Impact of Melt Transparency on Li₂MoO₄ Single Crystal Growth by the Czochralski Technique

Bouzouaoui,

Ayadi,

Brakni

et al. 2024

Cryst. Res. Technol.

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In this paper, it is found that taking a semitransparent melt, influences c–m interface shape, heat transfer, melt flow and von Mises thermal stress distributions, therefore the quality of the grown crystal. As a result, when absorption coefficients of both melt and crystal change from transparent to opaque case, the c–m interface convexity reduces from 12.5 to 5.8 mm, its shape becomes more convex toward the melt, and the maximum von Mises thermal stresses decreases from 69.55 to 13.8 MPa. For the second study, where the crystal absorption coefficient is fixed at , the c–m interface convexity increases with the increase in melt absorption coefficient. The maximum and minimum von Mises stresses for the case are low compared to other values; then the grown crystal has a good quality.

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Coupled Thermal Solidification Process Simulation of Sapphire Growth

Trasca,

Sistaninia,

Reiss

et al. 2023

Integr Mater Manuf Innov

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Effect of Internal Radiation on Heat Transfer during Ti:sapphire Crystal Growth Process by Heat Exchanger Method

Cited by 13 publications

References 47 publications

Unsteady melt heat flow coupling optimization method for sapphire crystal seeding growth by the Kyropoulos method

Unsteady melt heat flow coupling optimization method for sapphire crystal seeding growth by the Kyropoulos method

The Impact of Melt Transparency on Li₂MoO₄ Single Crystal Growth by the Czochralski Technique

Coupled Thermal Solidification Process Simulation of Sapphire Growth

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Effect of Internal Radiation on Heat Transfer during Ti:sapphire Crystal Growth Process by Heat Exchanger Method

Cited by 13 publications

References 47 publications

Unsteady melt heat flow coupling optimization method for sapphire crystal seeding growth by the Kyropoulos method

Unsteady melt heat flow coupling optimization method for sapphire crystal seeding growth by the Kyropoulos method

The Impact of Melt Transparency on Li2MoO4 Single Crystal Growth by the Czochralski Technique

Coupled Thermal Solidification Process Simulation of Sapphire Growth

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Product

Resources

About

The Impact of Melt Transparency on Li₂MoO₄ Single Crystal Growth by the Czochralski Technique