Effect of Intrinsic Defects on Electronic and Magnetic Properties in Tm-Doped GaN: First-Principles Calculations

Tuning Catalytic Performance of C2N/GaN Heterostructure for Hydrogen Evolution Reaction by Doping

“…Ritacco et al investigated the nitrogen-doping effects on the ZnO(100)-TiO 2 (101) heterojunction in experiments, they point out that the presence of N dopants can improve the heterojunction absorption in visible light and heterojunction exhibits great HER performance. [26] At present, GaN, as one of the typical representatives of the third generation of semiconductors, [27,28] has attracted extensive attention from researchers, [29,30] and substantial progress has been made in the study of optoelectronic properties of GaN thin films. Chen et al [31] investigated the transient photoconductive properties of GaN thin films deposited on sapphire substrates in experiments.…”

“…At present, GaN, as one of the typical representatives of the third generation of semiconductors, [ 27,28 ] has attracted extensive attention from researchers, [ 29,30 ] and substantial progress has been made in the study of optoelectronic properties of GaN thin films. Chen et al.…”