Effect of ion beam etching on metal-Si and metal-GaAs barriers

Sarov, G.

doi:10.1016/0042-207x(84)90220-3

Cited by 7 publications

(1 citation statement)

References 9 publications

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“…It is well known that this process is thermal annealing in temperature ranges specific for each separate metal -GaAs system. It is such kind of investigations that have been done for Ti/GaAs [l], Au/GaAs [2,31, Al/GaAs [3,4,61. Tantalum can also be considered as a promising candidate for the preparation of high quality Schottky barriers based on its good thermal stability, good adhesion to it, ability to reduce native GaAs oxides and capabilities of screening mutual diffusion of Au and GaAs [7,8].…”

Section: Introductionmentioning

confidence: 99%

Ta/GaAs schottky barriers produced by in situ sputter etching, RF magnetron sputtering of Ta, and its thermal oxidation

Gladkov

Varblianska

1990

phys. stat. sol. (a)

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A method for preparation of high quality Ta/GaAs Schottky barriers using of planar magnetron sputtering is presented. Thermally stimulated recovery of structural defects induced on GaAs by planar magnetron sputtering of Ta is studied and optimal time and temperature of this treatment are determined. Typical values of the ideality factors and barrier heights obtained on thermally treated structures are n = 1.03 to 1.07 and Φb = 0.7 eV, respectively. The oxidation of thermally treated Ta in the atmosphere of air, oxygen, and argon undeliberately doped with O2 is studied. It is demonstrated that at the optimum temperature for thermal treatment −400 °C and times up to 100 min – relatively thick oxide layers of about 80 nm can be formed. A model of the Ta/GaAs structures obtained under the conditions above described is presented. According to this model the Schottky barrier edge is buried in both, Ta2O5 and native GaAs oxides thus resulting in very small leakage currents — typically 10−9 A.

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Section: Introductionmentioning

confidence: 99%

Ta/GaAs schottky barriers produced by in situ sputter etching, RF magnetron sputtering of Ta, and its thermal oxidation

Gladkov

Varblianska

1990

phys. stat. sol. (a)

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Reactive Ion Etching of GaAs and Related III-V Compounds

Dzioba

1986

Erosion and Growth of Solids Stimulated by Atom and Ion Beams

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Argon-ion implantation damage studies in silicon Schottky barriers using anodic oxidation/etching

Chien

Ashok

1986

Journal of Applied Physics

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The nature of ion bombardment damage on Si surface barriers has been studied with 20-keV, variable-dose Ar ion implantation and controlled removal of the damaged Si surface layers prior to Schottky metallization. The electrical properties of resultant Al/p-Si Schottky diodes are found to be insensitive to the removal of the first few tens of nm of Si, and subsequent etching of over 100 nm is needed to restore the Schottky barrier height. Low-temperature I-V characteristics of these devices further reveal the presence of ion damage-induced polycrystalline regions, confirming recent observations under high-resolution electron microscopy.

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Effect of ion beam etching on metal-Si and metal-GaAs barriers

Cited by 7 publications

References 9 publications

Ta/GaAs schottky barriers produced by in situ sputter etching, RF magnetron sputtering of Ta, and its thermal oxidation

Ta/GaAs schottky barriers produced by in situ sputter etching, RF magnetron sputtering of Ta, and its thermal oxidation

Reactive Ion Etching of GaAs and Related III-V Compounds

Argon-ion implantation damage studies in silicon Schottky barriers using anodic oxidation/etching

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