Effect of Ion Beam Mixing and Compound Formation on Sputter Depth Profile of a Ta/Si Multilayer Thin Film

Stepanova, Maria

doi:10.1002/(sici)1096-9918(199606)24:6<416::aid-sia125>3.0.co;2-z

Cited by 6 publications

(1 citation statement)

References 23 publications

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“…Stepanova developed a phenomenological model to describe the asymmetric mixing considering the kinematical factors as well as the changed sputtering yield due to compound formation [21,22]. However, the asymmetry found in our case is so high, that it is unlikely that one could find parameters using of which the given calculation would describe our case.…”

Section: Formation Of the Sharp Interface Between The Carbon And The mentioning

confidence: 79%

Growing imbedded Ni₃C-rich layer with sharp interfaces by means of ion beam mixing of C/Ni layers

Barna

Kotis

Lábár

et al. 2011

J. Phys. D: Appl. Phys.

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C/Ni bilayers of various layer thicknesses (20–40 nm) were ion bombarded using Ga+ and Ni+ projectiles of energies 20 and 30 keV. Ion bombardment resulted in the growth of a Ni3C rich layer with the following features: (a) sharp carbon/Ni3C rich layer interface, (b) the amount of Ni3C produced by the irradiation proportional to the square root of the fluence and dependent on the type of projectile, (c) good correlation between the distribution of vacancies produced by the ion bombardment and the distribution of Ni3C. The formation of the metastable Ni3C compound was explained by a vacancy-assisted process. The sharp interface is the consequence of a relaxation process removing the intermixed Ni from the carbon layer. The square root of fluence dependence of the thickness of the Ni3C-rich layer can be explained by a usual diffusion equation considering moving boundaries.

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Section: Formation Of the Sharp Interface Between The Carbon And The mentioning

confidence: 79%

Growing imbedded Ni₃C-rich layer with sharp interfaces by means of ion beam mixing of C/Ni layers

Barna

Kotis

Lábár

et al. 2011

J. Phys. D: Appl. Phys.

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Design and production of tungsten-carbide rich coating layers

Racz

Fogarassy

Kentsch

et al. 2022

Applied Surface Science

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The influence of surface diffusion on surface roughness and component distribution profiles during deposition of multilayers

Galdikas

2007

Computational Materials Science

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Effect of Ion Beam Mixing and Compound Formation on Sputter Depth Profile of a Ta/Si Multilayer Thin Film

Cited by 6 publications

References 23 publications

Growing imbedded Ni₃C-rich layer with sharp interfaces by means of ion beam mixing of C/Ni layers

Growing imbedded Ni₃C-rich layer with sharp interfaces by means of ion beam mixing of C/Ni layers

Design and production of tungsten-carbide rich coating layers

The influence of surface diffusion on surface roughness and component distribution profiles during deposition of multilayers

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Effect of Ion Beam Mixing and Compound Formation on Sputter Depth Profile of a Ta/Si Multilayer Thin Film

Cited by 6 publications

References 23 publications

Growing imbedded Ni3C-rich layer with sharp interfaces by means of ion beam mixing of C/Ni layers

Growing imbedded Ni3C-rich layer with sharp interfaces by means of ion beam mixing of C/Ni layers

Design and production of tungsten-carbide rich coating layers

The influence of surface diffusion on surface roughness and component distribution profiles during deposition of multilayers

Contact Info

Product

Resources

About

Growing imbedded Ni₃C-rich layer with sharp interfaces by means of ion beam mixing of C/Ni layers

Growing imbedded Ni₃C-rich layer with sharp interfaces by means of ion beam mixing of C/Ni layers