Effect of ion bombardment in very-high frequency glow discharge on growth and properties of SiHx films

Abstract

Articles you may be interested inA highly stabilized hydrogenated amorphous silicon film having very low hydrogen concentration and an improved Si bond network J. Appl. Phys. 97, 033522 (2005); 10.1063/1.1846132 Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H 2 -SiH 4 plasma

Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties

“…Among these, VHF techniques consist of increasing the driving frequency to lower the ion energy. 2,13 In high density plasmas such as microwave discharges, the substrate holder can be biased to give some control on the ion energy. 14 On the other hand, the hot wire CVD technique, based on the decomposition of silane and hydrogen on a heated filament, is free of ion bombardment.…”

Carbon films deposited by low frequency plasma as inter-metal dielectric

“…Another effective etchant, oxygen, can come from the reactor walls because of desorption at the initial stage of the growth. The amount of this oxygen depends on the preparation 4.0x10 4 8.0x10 4 1.2x10 5 of the reactor before the deposition. Therefore, we carried out experiments on the influence of the preparation of the reactor before the deposition run, because out-gassing from the reactor walls provides some oxygen at the initial stage of the growth.…”

“…Error bars, in areas of the IR lines, were calculated as mean values of the deconvolution errors for 3-5 measurements of the lines in different parts of the sample. The thickness of the films was measured by a step profilometer in several (3)(4)(5) parts of the samples and scattering of the values was taken into account when accuracy of q and K measurements was estimated. We calculated K-values from capacitance measurements carried out with an AC bridge at a frequency f ¼ 1 kHz and from C ðV Þ characteristics measured at f ¼ 100 kHz.…”

“…Because of the near electrode sheaths, the surface of the growing films is bombarded with ions which are accelerated by the sheath potential. Ion bombardment of the growing film is an important factor, which affects the electronic properties of the film [3,4]. For diamond like carbon (DLC) films, this factor is a key one [5].…”

Methods of deposition of hydrogenated amorphous silicon for device applications

“…surface dimer bond breaking [401] and the formation of interstitials [402]. Few measurements are available on the ion energies and fluxes on the sheath of a discharge under typical deposition conditions [280,[403][404][405]. The influence of ion bombardment on defect density [405], mobility [404], and electronic properties [403,406] has been reported.…”