Effect of Ion Bombardment on the Density of States of Valence Electrons in CdS Films

Adsorption of Ba Atoms Influences the Composition, Emission, and Optical Properties of CdS Single Crystals

“…Single crystals and films of A 2 B 6 semiconductor compounds, in particular CdS, and related multilayer heterostructures are widely used for the creation of various micro-, nano-, and optoelectronic devices, including those for solar power engineering [1][2][3][4]. At present, the influence of heat treatments, laser annealing, microwave processing, and the ion and electron bombardment on the structure, composition, and optical properties of A 2 B 6 compounds and the process of atomic interdiffusion at the interfaces of multilayer systems based on these semiconductors have been thoroughly studied [5][6][7][8][9][10][11][12][13]. In recent years, we have used implantation of Ba + ions into CdTe and CdS [11,12] to obtain doped single crystalline layers and Cd 1 -x Ba x Te and Cd 1 -x Ba x S surface and subsurface layers.…”

“…At present, the influence of heat treatments, laser annealing, microwave processing, and the ion and electron bombardment on the structure, composition, and optical properties of A 2 B 6 compounds and the process of atomic interdiffusion at the interfaces of multilayer systems based on these semiconductors have been thoroughly studied [5][6][7][8][9][10][11][12][13]. In recent years, we have used implantation of Ba + ions into CdTe and CdS [11,12] to obtain doped single crystalline layers and Cd 1 -x Ba x Te and Cd 1 -x Ba x S surface and subsurface layers. Earlier, analogous two-and three-component nanostructures were obtained by ion implantation on the surfaces of Si, GaAs, and SiO 2 [13][14][15].…”