Effect of Isoelectronic In Doping on Deep Levels in GaN Grown by MOCVD

Cho, H.K.; Kim, C.S.; Hong, Yongseok; Kim, Y.-W.; Hong, Chang Hee; Suh, Eun‐Kyung; Lee, H.J.

doi:10.1002/1521-3951(200111)228:1<231::aid-pssb231>3.0.co;2-a

Cited by 5 publications

(2 citation statements)

References 16 publications

(14 reference statements)

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“…Like in MBE, this is attributed to In modifying the growth kinetics [4,6]. In addition, the dislocation density reduces and the formation of deep energy levels is suppressed [8,9]. Both in MBE and MOCVD the addition of In to the growth system leads to better quality layers.…”

Section: Introductionmentioning

confidence: 92%

Influence of In on the surface morphology of HVPE grown GaN

Dam

Hageman

Enckevort

et al. 2007

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 92%

Influence of In on the surface morphology of HVPE grown GaN

Dam

Hageman

Enckevort

et al. 2007

Journal of Crystal Growth

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“…self-compensation effects that degrade the film properties [3,4]. Isoelectronic In doping has been found to be an efficient technique to improve the optical and electrical properties of GaN based nitride epilayers and quantum structures [5][6][7][8][9]. However, there have been very few reports on the effect of In co-doping in p-type GaN layers [10,11].…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Mg-doped and In–Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

Chung¹,

Kumar²,

Lee³

et al. 2010

J. Phys. D: Appl. Phys.

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Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

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Growth and Characteristics of In‐Doped GaN Thin Films

Kim

Yoon

Choi

et al. 2002

phys. stat. sol. (c)

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PACS : 68.55.Ln; 71.55.Eq; 72.20.Dp In-doped GaN thin films were grown by metalorganic chemical vapor deposition (MOCVD) with different trimethylindium (TMIn) flow rates and those structural and electrical characteristics were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), Hall effect measurement and deep level transient spectroscopy (DLTS). The full width at half maximum (FWHM) of X-ray rocking curves and the pit density, which is estimated by AFM images, decrease with increasing TMIn flow rate. It seems that In doping has definite effects of reducing dislocation density in In-doped GaN films. Hall mobility increases with increasing TMIn flow rate. As an explanation, from an analysis of temperature-dependent Hall effect measurements based on a two-layer mixed conduction model, the mobility contribution of the epilayer compared to that of the interface layer between GaN and sapphire is increased due to reduction of dislocation density in In-doped GaN thin films. It is also observed that the reduction of deep level E2 is related to In-doping.

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Effect of Isoelectronic In Doping on Deep Levels in GaN Grown by MOCVD

Cited by 5 publications

References 16 publications

Influence of In on the surface morphology of HVPE grown GaN

Influence of In on the surface morphology of HVPE grown GaN

Characteristics of Mg-doped and In–Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

Growth and Characteristics of In‐Doped GaN Thin Films

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