Effect of isotropic proton irradiation on the performance of ITO/InP solar cells

Pearsall, Nicola; Goodbody, C.; Oparaku, O.U.; Dollery, A. A.; Hill, Ross H.

doi:10.1109/pvsc.1988.105833

Cited by 2 publications

(1 citation statement)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Since the alloying process is temperature dependent, it follows that the contact resistance will be influenced by the intermixing of the metallisation and the semiconductor. In the case where Zn is used as the dopant, an Au sandwich layer has been found to control the Zn diffusion and to improve the contact resistance [2]. In the work reported here, the mechanism behind the alloying process and ohmic contact formation has been investigated for Au/Zn contacts to InP.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Zn/Au back contact to low-doped p-InP

Oparaku¹,

Dargan²,

Pearsall³

et al. 1990

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The mechanism behind the formation of alloyed ohmic contacts to p-type InP doped in the 10l6 cm-3 range has been investigated. Techniques used for characterising the contacts include the scanning electron microscope (SEM), specific contact resistance measurements, x-ray diffractometry (XRD), energy dispersive x-ray analysis (EDAX) and Auger electron spectroscopy (AES). Both temperature and time of annealing were varied during the study. The results obtained using our annealing procedures indicate that the optimum contact resistance is associated with the formation of an Au-In phase. The atomic percentage of indium increases with increasing annealing temperature whilst that of gold drops. Zinc phases appear only at the higher annealing temperatures used.

show abstract

Section: Introductionmentioning

confidence: 99%