Effect of junction curvature on breakdown voltage in semiconductors

Design and Performance of an InGaAs–InP Single-Photon Avalanche Diode Detector

“…The active area is shaped by the diffusion of zinc via two separate processes using different mask sets as first suggested by Liu et al [12]. This double diffusion reduces the curvature at the edge of the device, thus reducing the likelihood of edge breakdown [17], where the device will preferentially exhibit avalanche breakdown at the edge of the active area rather than in the central region, hence significantly lowering the SPDE. The likelihood of edge breakdown can be further reduced by the introduction of floating guard rings (FGR) [12] that decrease the electric field at the edges of the main junction.…”

Study on the Design of Power MOSFET for Smart LED Driver ICs Package

“…2000년대부터 발전된 LED 산업의 급속한 발전으로 LED를 광원으로 이용한 응용제품들이 일반조명 분야 뿐 아니라 자동차, 해양 조선, 디스플레이, 농업, 의료 장비 등 다양한 분야에 전 세계적으로 개발되고 있다 [1][2][3]. 현재 대부분의 LED 조명용 PSU (power supply unit)는 SMPS (switch mode power supply)와 LED 정전류 구동회로로 구성되는 2단계 전력변환방식임.…”

A Study of Field-Ring Design using a Variety of Analysis Method in Insulated Gate Bipolar Transistor (IGBT)

“…Combined with fast switching characteristic of the MOSFET along with high-current and low-saturation-voltage capability of the BJT, the IGBT expands its scope of applications such as display, automobile, motor and household appliances [1]. Breakdown voltage under the high voltage environment is a key characteristic required in the IGBT, which is therefore designed by implementing an edge-termination structure -called edge termination region -in the lateral side of its junction so as to alleviate the electric field in the junction edge [2][3][4][5][6]. Fig.…”