Effect of La incorporation on reliability characteristics of metal–oxide-semiconductor capacitors with hafnium based high-k dielectrics

Kim, Tea Wan; Jang, T.; Kim, Donghyup; Kim, Jung Ho; Jeong, Jae Kyeong; Choi, Rino; Lee, Myung Soo; Kim, Hyoungsub

doi:10.1016/j.mee.2011.01.036

Cited by 3 publications

(1 citation statement)

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“…That is why the interpretation of the degradation behavior of a certain high-k dielectric by analogy to another one could be misleading. Despite the increased studies [6,7,13,[16][17][18][20][21][22] the BD phenomena remain not completely clarified, and the physical mechanisms linking the high-k dielectric breakdown to stack traps are not specified.…”

Section: Introductionmentioning

confidence: 99%

Time-dependent dielectric breakdown in pure and lightly Al-doped Ta₂O₅stacks

Atanassova¹,

Stojadinović²,

Spassov³

et al. 2013

Semicond. Sci. Technol.

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The time-dependent dielectric breakdown (TDDB) characteristics of 7 nm pure and lightly Al-doped Ta 2 O 5 (equivalent oxide thickness of 2.2 and 1.5 nm, respectively) with W gate electrodes in MOS capacitor configuration are studied using gate injection and constant voltage stress. The effect of both the process-induced defects and the dopant on the breakdown distribution, and on the extracted Weibull slope values, are discussed. The pre-existing traps which provoke weak spots dictate early breakdowns. Their effect is compounded of both the stress-induced new traps generation (percolation model is valid) and the inevitable lower-k interface layer in the region with long time-to-breakdown. The domination of one of these competitive effects defines the mechanism of degradation: the trapping at pre-existing traps appears to dominate in Ta 2 O 5 ; Al doping reduces defects in Ta 2 O 5 , the generation of new traps prevails over the charge trapping in the doped samples, and the mechanism of breakdown is more adequate to the percolation concept. The doping of high-k Ta 2 O 5 even with small amount (5 at.%) may serve as an engineering solution for improving its TDDB characteristics and reliability.

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