Effect of La2Zr2O7-buffered YSZ substrate on YBa2Cu3Oy thin films by chemical solution deposition

Jin, Lihua; Yu, Z.M.; Zhang, Yun; Wang, Yao; Guo, Yan; Li, Chengshan; Lu, Yafeng

doi:10.1016/j.physc.2010.05.237

Cited by 2 publications

(1 citation statement)

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“…Ternary oxide phases are known for La–Zr–O, and the La 2 Zr 2 O 7 crystalline pyrochlore has been extensively investigated as a substrate for epitaxial growth of YBCO superconductors. − In the past decade, amorphous La x Zr y O z has been studied as a dielectric material and has been synthesized via vacuum-based vapor-deposition routes − and sol–gel solution-deposition routes. − Although vapor-deposition routes generally produce high-quality films, − they are energy-intensive, require expensive starting materials and equipment, and have low atom economy. In contrast, solution-deposition routes are relatively inexpensive, require less-sophisticated equipment, and can produce less waste. − However, common sol–gel routes rely on organic additives and solvents which must be expelled during film processing, leading to porosity and undesirable high leakage currents in devices. , Many of these disadvantages can be circumvented by using aqueous precursors.…”

Section: Introductionmentioning

confidence: 99%

High-κ Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors

Woods

Chiang

Plassmeyer

et al. 2017

ACS Appl. Mater. Interfaces

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Metal oxide thin films are critical components in modern electronic applications. In particular, high-κ dielectrics are of interest for reducing power consumption in metal-insulator-semiconductor (MIS) field-effect transistors. Although thin-film materials are typically produced via vacuum-based methods, solution deposition offers a scalable and cost-efficient alternative. We report an all-inorganic aqueous solution route to amorphous lanthanum zirconium oxide (LaZrO, LZO) dielectric thin films. LZO films were spin-cast from aqueous solutions of metal nitrates and annealed at temperatures between 300 and 600 °C to produce dense, defect-free, and smooth films with subnanometer roughness. Dielectric constants of 12.2-16.4 and loss tangents <0.6% were obtained for MIS devices utilizing LZO as the dielectric layer (1 kHz). Leakage currents <10 A cm at 4 MV cm were measured for samples annealed at 600 °C. The excellent surface morphology, high dielectric constants, and low leakage current densities makes these LZO dielectrics promising candidates for thin-film transistor devices.

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