Effect of Lanthanum Substrates on the Structural, Optical and Electrical Properties of Copper Selenide Thin Films Designed for 5G Technologies

Abstract

In this work, copper selenide thin films coated onto glass and transparent lanthanum substrates are studied. The (glass, La)/CuSe thin films which are prepared by the thermal evaporation technique under a vacuum pressure of 10− 5 mbar are structurally, morphologically, optically, dielectrically and electrically characterized. Lanthanum substrates improved the crystallinity by increasing the crystallite size and decreasing both of the microstrains and defect density of copper selenide. La substrates redshifts the energy band gap and doubled the dielectric constant values. In addition, employing Drude-Lorentz approaches for optical conduction to fit the dielectric constant provided information about the effects of La substrates on the drift mobility, plasmon frequency, free carrier density and scattering times at femtosecond level. The drift mobility increased and the plasmon frequency range is modified when La substrates are used. Verifying impedance spectroscopy test in the microwave frequency domain have shown that the La(gate)/CuSe/Ag (source) transistors can be employed as band pass filter suitable for 5G technologies. The microwave cutoff frequency reached ~ 5.0 GHz at a notch frequency of 2.80 GHz of the La/CuSe/Ag highpass filters.