Effect of laser annealing on crystallinity of the Si layers in Si/SiO2 multiple quantum wells

Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing

“…Therefore, shifting of absorption edge in the quartz/Si structure towards shorter wavelengths is due to changes occurring in the silicon film. The observed absorption edge shifting in the spectra of the specimens under investigation correlates with the data given in [4], where it was shown that laser action on thin Si films at SiO 2 surface leads to similar effect because of silicon recrystallization.…”

“…The increase of transmission coefficients for the quartz/Si, glass/Si, quartz/Si/SiO 2 and SiC/Si/SiO 2 structures that occurs after laser annealing correlates with the data given in [4] where increase of transmission coefficient in thin silicon films resulting from laser annealing was observed too. In [4] that effect was explained by the phase transition from -Si to poly-Si that appeared due to laser annealing.…”

“…An additional argument that in our case silicon film recrystallization under laser annealing can also occur is shifting of absorption edge in the quartz/Si structure towards shorter wavelengths (Fig. 1) that correlates with the results of [4].…”

“…In [4] that effect was explained by the phase transition from -Si to poly-Si that appeared due to laser annealing. An additional argument that in our case silicon film recrystallization under laser annealing can also occur is shifting of absorption edge in the quartz/Si structure towards shorter wavelengths (Fig.…”

“…In the course of laser annealing of -Si or poly-Si layers deposited onto a single crystalline Si substrate, their homoepitaxial recrystallization occurs [1,4]. Such processes may help to obtain the most efficient presentday cascade solar cells with the structure of -Sipoly-Si structure.…”