Effect of laser intensity redistribution on semiconductor plasma based THz emission

Varshney, Prateek; Singh, Amit Pratap; Upadhyaay, A.; Kundu, M.; Gopal, K.

doi:10.1016/j.ijleo.2021.168353

Cited by 9 publications

(2 citation statements)

References 20 publications

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“…Considering the generation mechanism of the THz radiation, the present approach will be a good choice to deal with collisional plasma with thermal effects. Also, the present physical model reports the enhanced THz field with previously reported studies of the THz field generation in semiconductor plasmas [38] and the mixture of nanoparticles and argon gas. [35] Figure 3 depicts the variation of the normalized terahertz field amplitude with normalized transverse distance for different FG-indices ( f ) of lasers.…”

Section: Resultssupporting

confidence: 83%

“…L dy is the average electromagnetic energy density for the incident laser. THz field efficiency (η) is estimated numerically in the range of 10 −3 -10 −4 for varying values of the FG-index ( f ) for an optimized inclination of the density ripples that is significantly higher than that from previously reported mechanism [11,38] of the THz emission.…”

Section: Resultsmentioning

confidence: 81%

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Nonlinear mixing-based terahertz emission in inclined rippled density plasmas

2023

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We propose to investigate the THz field generation using nonlinear mixing mechanism of laser beat wave with inclined rippled density plasmas. Two laser pulses with frequencies (ω 1, ω 2) and wave vectors (κ 1,κ 2) co-propagate and resultant laser beat wave forms at beat frequency (ω 1-ω 2). Laser beat wave imparts a nonlinear force on the ambient electrons and pushes them outward with nonlinear velocity v NL . Coupling of induced density perturbation and nonlinear velocityv NL generates nonlinear currents at laser beat frequency that further generates electromagnetic field E (ω 1-ω 2) in terahertz (THz) range. In present scheme, density ripples are introduced at an angle with respect to laser propagation and flat Gaussian index (f) is introduced in laser field profile that transform curved top of Gaussian field envelope into flat top field envelope. The combined effect of flat laser pulses with inclined density ripples in plasmas shows 10 fold enhancement in THz field amplitude when flat-Gaussian index (f) varies from 1 to 4. Also, THz field intensifies when density ripples inclination increases upto a certain angle and then decreases.

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Section: Resultssupporting

confidence: 83%

Section: Resultsmentioning

confidence: 81%

Nonlinear mixing-based terahertz emission in inclined rippled density plasmas

2023

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Laser intensity profile based terahertz field enhancement from a mixture of nano-particles embedded in a gas

et al. 2022

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Nano-particle embedded system plays an importance in developing of future terahertz (THz) radiation source for real-world applications. The laser interactions with nanoparticle embedded system can produce a wide range of THz radiation due to plasma oscillations excitation. We investigate THz field generation from the laser-beat wave interaction with a mixture of spherical and cylindrical graphite nanoparticles in argon gas. Different laser intensity distributions such as Gaussian, cosh-Gaussian, flat-top and ring shape laser pulses have been studied in this work. The relevant plasmon resonance conditions with appropriate symmetry of spherical nanoparticles and cylindrical nanoparticles are discussed. THz field is enhanced upto the order of when the laser intensity redistributes along the polarization direction for a ring shape field envelope.

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Excitation of terahertz surface magnetoplasmons by nonlinear mixing of laser and its second harmonic on a rippled surface of n type semiconductor

Srivastav

Panwar²

2022

Opt Quant Electron

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We investigated the excitation of terahertz (THz) surface magneto plasmons (SMPs) by nonlinear mixing of laser and its frequency shifted second harmonic on a rippled surface of n-type semiconductor-free space interface. Obliquely incident p-polarized lasers exert a nonlinear ponderomotive force on free electrons of n-type semiconductor. Nonlinear ponderomotive force induce the oscillatory velocities at frequencies 2ω1 and (ω1 − ω2). These oscillatory velocities beat the modulated electron density nq to get the charge density perturbation at (2ω1, 2k1z + q) and (ω1 − ω2, k1z − k2z + q). Perturbed charge density couples with the linear oscillatory velocities to produce a nonlinear current density, which resonantly derives THz SMPs at frequency ω = 2ω1 − ω2 and propagation constant kz = 2k1z − k2z + q. Here, q provides the extra wave number for the phase matching condition. The efficiency of THz SMPs wave attained up to 9% and amplitude of THz SMPs controlled by the electron cyclotron frequency ωce and incident angle θ.

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Effect of laser intensity redistribution on semiconductor plasma based THz emission

Cited by 9 publications

References 20 publications

Nonlinear mixing-based terahertz emission in inclined rippled density plasmas

Nonlinear mixing-based terahertz emission in inclined rippled density plasmas

Laser intensity profile based terahertz field enhancement from a mixture of nano-particles embedded in a gas

Excitation of terahertz surface magnetoplasmons by nonlinear mixing of laser and its second harmonic on a rippled surface of n type semiconductor

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