Effect of layer thickness on thermoelectric properties of multilayered Si1−xGex/Si after bombardment by 5 MeV Si Ions

Zheng, B.; Budak, S.; Zimmerman, R. L.; Muntele, C.; Chhay, B.; Ila, D.

doi:10.1016/j.surfcoat.2006.12.029

Cited by 14 publications

(5 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The increase in the electrical conductivity is a desired property for the TE device and TEM. The increase of electronic density of states in the miniband of the quantum dot structure formed by ion bombardment increases the electrical conductivity and the Seebeck coefficient (Zheng et al, 2007).…”

Section: Resultsmentioning

confidence: 99%

Thermoelectric properties of SiO₂/SiO₂+CoSb multi-nanolayered thin films modified by MeV Si ions

Budak

Smith²,

Muntele

et al. 2012

Journal of Intelligent Material Systems and Structures

View full text Add to dashboard Cite

We have fabricated the thermoelectric generator devices from 100 alternating layers of SiO2/SiO2+CoSb superlattice thin films using the ion beam–assisted deposition. Rutherford backscattering spectrometry was used for quantitative elemental analysis of Si, Co, and Sb in the multilayer films. The thin films were then modified by 5-MeV Si ion bombardments using the Alabama A&M University Pelletron ion beam accelerator. Quantum dots and/or clusters were produced in the nanolayered superlattice films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient, and the cross-plane electrical conductivity. We have characterized the thermoelectric generator devices before and after Si ion bombardments using the thermoelectric, optical, and surface characterization techniques. The optical absorption amplitude decreased when the first fluence of 1 × 1012 ions/cm2 was introduced from the value of 2.8 to about 1.9 at 200 nm. The figure of merit reached the maximum value of about 0.005 at the fluence of 1 × 1013 ions/cm2.

show abstract

Section: Resultsmentioning

confidence: 99%

Thermoelectric properties of SiO₂/SiO₂+CoSb multi-nanolayered thin films modified by MeV Si ions

Budak

Smith²,

Muntele

et al. 2012

Journal of Intelligent Material Systems and Structures

View full text Add to dashboard Cite

show abstract

“…Recent measurements yielded an impressive ZT of 4.9 in SiO2/SiO2 + Ge multilayer thin films. Budak et al (2013) performed some researches on Si/Si + Ge (Zheng et al, 2007;Budak et al, 2014) and Si/Si + Sb (Budak et al, 2015a) multilayered thin film modified by high energy ion beam bombardments addition to the researches on different materials. Some suitable fluence (doses) of the applied high energy beam improved the thermoelectric properties of the fabricated multilayer thin film devices.…”

Section: Introductionmentioning

confidence: 99%

Thermal Treatment Effects on the Thermoelectric Properties of Ni/Si/Si + Sb/Si/Si + Ge/Ni Multilayer Thin Films

Budak¹,

Yang²

2020

American Journal of Engineering and Applied Sciences

View full text Add to dashboard Cite

The multilayer thermoelectric devices including Ni/200 layers of Si/Si + Sb/200 layers of Si/Si + Ge/Ni thin films were fabricated using electron beam and DC/RF magnetron sputtering deposition systems. The thickness measurements have been performed using Filmetrics UV thickness measurement system. The Au contacts at the bottom and top of the fabricated thermoelectric devices were measured as 100 nm for each side. Ni layer at the bottom is 108 nm and Ni layer at the top of the multilayer structures is 168 nm. The thickness of 200 layers of Si/Si + Ge thin film is 173 nm and the thickness of 200 layers of Si/Si + Sb thin film is 199 nm. The fabricated thermoelectric devices have total of 402 layers of thin films with the total thickness of 648 nm thickness excluding two Au contact layers. The prepared thin film devices were annealed at different temperatures for one hour to improve the thermoelectric properties. The current studied system has reached some remarkable values of Seebeck coefficients when the suitable annealing temperatures and the suitable operating temperatures of Seebeck measurement system were applied. The multilayer thin film system has reached the Seebeck coefficient of-344.8 μV/K when the annealed temperature was 100°C and the operating temperature was 320 K. One of the main problems with the thermoelectric devices is having higher temperature dissipation during the operation of the devices. Ni thin film was used in the fabrication process to remove excess of the heat as a heat sink from the thermoelectric devices. This will bring new approach for the high efficient thermoelectric devices. The goal of the manuscript is to improve the thermoelectric properties of the fabricated thin film thermoelectric devices using Ni thin films and the thermal treatment. The resistivity values decreased when the annealing temperatures increased. The highest power factor values were reached when the thermoelectric devices were annealed at 100°C. Mobility values increased when the suitable temperatures were applied for thermal treatment.

show abstract

“…The dimensionless figure of merit ZT is given as ZT=S 2 σT/K, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature in Kelvin (K), and K is the thermal conductivity [4][5][6]. [9,10] and surface modification of Si/Ge multilayers by MeV Si ion bombardment in ref. Ion beam bombardment induces the formation of quantum dots of Si and Ge in the multilayer film systems.…”

Section: Introductionmentioning

confidence: 99%

MeV Si Ions Bombardment Effects on the Thermoelectric Properties of Si/Si+Ge Multi-Layer Superlttice Nanolayered Films

et al. 2010

Self Cite

View full text Add to dashboard Cite

Effective thermoelectric materials have a low thermal conductivity and a high electrical conductivity. The performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S 2 σT/K, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature and K is the thermal conductivity. ZT can be increased by increasing S, increasing σ or decreasing K. MeV ion bombardment caused defects and disorder in the film and the grain boundaries of these nano-scale clusters increase phonon scattering and increase the chance of an inelastic interaction and phonon annihilation. We have prepared 100 alternating layers of Si/Si+Ge nanolayered superlattice films using the ion beam assisted deposition (IBAD). The 5 MeV Si ions bombardments have been performed using the AAMU Pelletron ion beam accelerator to make quantum clusters in the nanolayered superlattice films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. We have characterized the thermoelectric thin films before and after Si ion bombardments as we measured the cross-plane Seebeck coefficient, the cross-plane electrical conductivity, and the cross-plane thermal conductivity for different fluences.

show abstract

Effect of layer thickness on thermoelectric properties of multilayered Si1−xGex/Si after bombardment by 5 MeV Si Ions

Cited by 14 publications

References 6 publications

Thermoelectric properties of SiO₂/SiO₂+CoSb multi-nanolayered thin films modified by MeV Si ions

Thermoelectric properties of SiO₂/SiO₂+CoSb multi-nanolayered thin films modified by MeV Si ions

Thermal Treatment Effects on the Thermoelectric Properties of Ni/Si/Si + Sb/Si/Si + Ge/Ni Multilayer Thin Films

MeV Si Ions Bombardment Effects on the Thermoelectric Properties of Si/Si+Ge Multi-Layer Superlttice Nanolayered Films

Contact Info

Product

Resources

About

Effect of layer thickness on thermoelectric properties of multilayered Si1−xGex/Si after bombardment by 5 MeV Si Ions

Cited by 14 publications

References 6 publications

Thermoelectric properties of SiO2/SiO2+CoSb multi-nanolayered thin films modified by MeV Si ions

Thermoelectric properties of SiO2/SiO2+CoSb multi-nanolayered thin films modified by MeV Si ions

Thermal Treatment Effects on the Thermoelectric Properties of Ni/Si/Si + Sb/Si/Si + Ge/Ni Multilayer Thin Films

MeV Si Ions Bombardment Effects on the Thermoelectric Properties of Si/Si+Ge Multi-Layer Superlttice Nanolayered Films

Contact Info

Product

Resources

About

Thermoelectric properties of SiO₂/SiO₂+CoSb multi-nanolayered thin films modified by MeV Si ions

Thermoelectric properties of SiO₂/SiO₂+CoSb multi-nanolayered thin films modified by MeV Si ions