2024
DOI: 10.32362/2410-6593-2024-19-2-163-173
|View full text |Cite
|
Sign up to set email alerts
|

Effect of leakage of volatile synthesis products on silicon carbide yield in an electrothermal fluidized bed reactor

V. S. Kuzevanov,
S. S. Zakozhurnikov,
G. S. Zakozhurnikova

Abstract: Objectives. To calculate the effect of leakage of volatile synthesis products on silicon carbide yield in an electrothermal fluidized bed reactor, as well as to develop a general model of the synthesis of finely divided silicon carbide. This will be achieved by particularizing a mathematical model of leakage of volatile products of chemical reactions from the reaction volume of the reactor with the fluidizing inert gas.Methods. As a method to produce silicon carbide, synthesis in an electrothermal fluidized be… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 12 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?