Partial coherent imaging in a high NA stepper is treated with the source integration method. Image formation in 3D is accomplished by the propagation and interference of plane waves. This approach allows the extensive use of FFF and leads to efficient computation of the latent image. In order to further reduce the computation time, we propose a sufficient condition for the grid density in an image plane based on the sampling theorem. Finally, we present a semi-analytical method for the modeling of post exposure bake process in 3D. With these enhancements in the algorithm, a typical 3D latent image problem can be solved in a few seconds on a workstation.
IntroductionIn recent years, photolithography simulators have been used more frequently in process development. The ability for a simulator to give the correct process trend has been well recognized. One of the remaining tasks for the lithography model developers is to make the simulator quantitatively accurate. In order to achieve this goal, we developed a new program, iPHOTO-il, for high NA steppers used in modem IC manufacturing. The construction of the simulator emphasizes predictive accuracy, computational efficiency and ease of use. Easily readable commands are used to input parameters into the program, which also provides an unlimited looping capability. As a result, any of the computed quantities (feature size, wall angle, etc.) can be displayed against input variables (focus, exposure, etc.), creating various response surfaces for analysis and calibration.In iPHOTO-il, scalar diffraction theory is used in the imaging and exposure modules. The propagation and multiple reflection of waves inside the resist layer are treated in compliance with the scalai approximation. Accurate resist models calibrated with process data are implemented to model the resist profile for all types of simulations so that the results can be compared directly with wafer level experimental data.The simulator is constructed for modularity, with all parts of the numerical stepper accessible to the user. Models are developed for a large number of image improvement techniques, various types of aberrations, and broad band imaging. Advanced modeling capabilities such as mask topography scattering and non-planar substrate are implemented by facilitating data transfer with a Maxwell's equations solver. The simulator is used extensively in research and process development and has produced many useful results[1] [2]. 372 / SPIE Vol. 2440 0-8194-1788-2/95/$6.00 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/27/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx