Effect of Light Absorption in InGaN/GaN Vertical Light-Emitting Diodes

Abstract

For evaluating the effect of light absorption in vertically structured thin film light-emitting diodes (VLEDs), we investigate the dependence of the efficiencies on the several specific parameters including thickness and doping concentration (N(D)) of the n-GaN layer, a design of hetero-structures of the n-GaN layer, and a number of pairs of multi-quantum wells (MQWs). Generally, there is a complementary relation between internal quantum efficiency (IQE) and light extraction efficiency (LEE). However, we confirmed that LEE determined by light absorption is more dominant than IQE in VLED structures with a textured surface, from numerical simulation and experimental results. Effect of light absorption is more prominent in the vertical chip with a textured surface than in that with a flat surface, because a travel length of light extracted from the textured surface is longer. Minimizing light absorption in VLEDs is a key technology for improving light output, and light absorption speaks for the index of enhancement by the general technologies for improving LEE.

Light Extraction Efficiency of GaN-Based Micro-Scale Light-Emitting Diodes Investigated Using Finite-Difference Time-Domain Simulation

“…The absorption coefficient of the GaN material was varied from 0 to 50 cm −1 [31]- [33]. The complex refractive index of Ag was chosen to be 0.14 + 2.47 i [34], which results in a reflectance between the p-GaN and Ag of ∼90%.…”