Effect of light irradiation from inductively coupled Ar plasma on etching yields of SiO₂film by CF₃ion beam injections

Abstract

Abstract. Effects of light irradiation on etching yields of SiO 2 films by CF 3 ion beams have been investigated with a low-energy mass selected ion beam system. An inductively coupled plasma (ICP) from Ar gas was used as the light source. The spectrum of light emitted from the Ar ICP was measured by vacuum ultraviolet and visible monochromators. Etching yields of SiO 2 films by 470 eV CF 3 ion beam injections were obtained from the ratio of the number of incident CF 3 ions to that of removed SiO 2 atoms during the ion beam injection process with or without simultaneous light irradiation from the Ar ICP. The incident ion number was evaluated from the integration of temporal evolution of ion beam current. The number of removed atoms can be obtained from the etched depth of SiO 2 films measured by a laser interferometer. It is found that the obtained SiO 2 etching yield by simultaneous irradiation of CF 3 ions and photons from the light source was smaller than that by ion beam irradiation only.

Overview of an Inductively Coupled Plasma (Icp) System

“…Investigated the Effects of light irradiation on etching yields of SiO2 films by CF3 ion beams with a low-energy mass selected ion beam system [38]. Inductively coupled plasma (ICP) from Ar gas was used as the light source.…”