2015
DOI: 10.1515/oph-2015-0005
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Effect of light irradiation on the gas sensor characteristics of the SnO2 and ZnO modified by tetrathiafulvalene derivative

Abstract: Abstract:We present the description of the synthesis and characteristics of the SnO 2 and ZnO modified by novel tetrathiafulvalene (TTF) derivative. The analysis of the gas sensor properties showed the possibility of light photoactivation of modified semiconductor gas sensor due to the electron transfer from LUMO of TTF molecule to the conduction band of semiconductor matrix.

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Cited by 7 publications
(4 citation statements)
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“…8) that correlates to its smallest particle size and largest surface area. The same tendency was previously observed for NO 2 sensor signal obtained under constant blue light illumination for SnO 2 and ZnO with specific surface area varied from 5 to 110 m 2 /g [17] and under UV light for In 2 O 3 samples with specific surface area of 10 -100 m 2 /g [45]. We can suppose that the sample with the highest surface-to-volume ratio contains the largest number of defects which participate in the interaction with NO 2 molecules and the number of surface sites available for NO 2 adsorption is the main factor determining the resistance change in the presence of given concentration of acceptor gas.…”
Section: Resultssupporting
confidence: 86%
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“…8) that correlates to its smallest particle size and largest surface area. The same tendency was previously observed for NO 2 sensor signal obtained under constant blue light illumination for SnO 2 and ZnO with specific surface area varied from 5 to 110 m 2 /g [17] and under UV light for In 2 O 3 samples with specific surface area of 10 -100 m 2 /g [45]. We can suppose that the sample with the highest surface-to-volume ratio contains the largest number of defects which participate in the interaction with NO 2 molecules and the number of surface sites available for NO 2 adsorption is the main factor determining the resistance change in the presence of given concentration of acceptor gas.…”
Section: Resultssupporting
confidence: 86%
“…However, bulk metal oxide semiconductors are transparent in this region of the spectrum. So, there are only few articles reported the room temperature gas sensor properties of blank nanocrystalline WO 3 [16], SnO 2 and ZnO [17] under visible light illumination. To increase MOS sensitivity to the visible light it is necessary to modify them with the photosensitizers capable to absorb such radiation.…”
Section: Introductionmentioning
confidence: 99%
“…Gas responses to NO 2 gas of sensing materials in the present study and those reported in the literature[13][14][15][16][17].…”
supporting
confidence: 72%
“…The sensor sensitivity of such hybrid materials to changes in the concentration of oxygen, carbon monoxide [ 140 ], and nitrogen dioxide [ 141 , 142 ] at room temperature under visible radiation sources was established. Among the dyes that have been used to sensitize metal oxide sensors, tetratiafulvalene [ 143 ], perilenediimide [ 144 ], and copper phthalocyanine [ 145 ] can also be noted.…”
Section: Activation Of Gas Sensitivity Of Semiconductor Metal Oxides Under Visible Lightmentioning
confidence: 99%