2016
DOI: 10.7567/jjap.55.04ec03
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Effect of local stress induced by thermal expansion of underfill in three-dimensional stacked IC

Abstract: A three-dimensional stacked IC (3D IC) is a one of the promising structures for enhancing IC performances. A 3D IC consists of several materials such as a Si substrate, metal for through Si via (TSV) and microbump, organic adhesive called the underfill, and so on. These materials generate a coefficient of thermal expansion (CTE) mismatch. On the other hand, heat is generated in the Si substrate during circuit operation and in the environment outside 3D IC, for example. Both the CTE mismatch and heat generation… Show more

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Cited by 10 publications
(3 citation statements)
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“…Thermal expansion is another critical factor determining the capability, performance, and lifetime of materials working under variable thermal conditions. For example, the Invar property (i.e., small/negligible thermal expansion) of Fe–Ni alloys makes them useful for precision instruments, e.g., watch-hair spring and micromachinery systems; , however, in multilayer ceramic coatings , and miniature transistors, it is the thermal-expansion mismatch and the resulting internal thermal stress between the contacting components that cause severe cracks and spallations under thermal cycling. As an incipient ferroelectric material, ferroelectricity can be readily induced in SrTiO 3 by various approaches (e.g., electric field, stress, and chemical substitution), and ferroelectric field-effect transistors made of substrate-supported perovskites (e.g., SrTiO 3 ) have also been fabricated and are promising for information storage and processing, , for which phase stability and thermal expansion are expected to be important during processing and in operation.…”
Section: Introductionmentioning
confidence: 99%
“…Thermal expansion is another critical factor determining the capability, performance, and lifetime of materials working under variable thermal conditions. For example, the Invar property (i.e., small/negligible thermal expansion) of Fe–Ni alloys makes them useful for precision instruments, e.g., watch-hair spring and micromachinery systems; , however, in multilayer ceramic coatings , and miniature transistors, it is the thermal-expansion mismatch and the resulting internal thermal stress between the contacting components that cause severe cracks and spallations under thermal cycling. As an incipient ferroelectric material, ferroelectricity can be readily induced in SrTiO 3 by various approaches (e.g., electric field, stress, and chemical substitution), and ferroelectric field-effect transistors made of substrate-supported perovskites (e.g., SrTiO 3 ) have also been fabricated and are promising for information storage and processing, , for which phase stability and thermal expansion are expected to be important during processing and in operation.…”
Section: Introductionmentioning
confidence: 99%
“…Advanced ICs have various stress/ strain issues that could be resolved by the negative thermal expansion materials. [17][18][19][20][21] The unique characteristics of negative thermal expansion materials have been considered for application in semiconductor packaging, microelectromechanical systems, and superconductivity. [22][23][24] The coefficient of thermal expansion (CTE) mismatch between different materials is a principal factor that induces film stress.…”
mentioning
confidence: 99%
“…The heat generation due to circuit operations also results in IC performances with critical issues. [1][2][3][4] The thermal stability of CMOS ICs is one of the important characteristics that ensures their use at different ambient temperatures. The resistances of conductive materials (e.g.…”
mentioning
confidence: 99%