Effect of localization on photoluminescence and zero-field splitting of silicon color centers

Strain Engineering of the Electronic States of Silicon‐Based Quantum Emitters

“…Finally, the possibility to control the degeneracy of the electronic level in G-centers, and more generally in this class of impurities in silicon, might be relevant for the manipulation of their spin features. Symmetry breaking by application of strain could be the way to split the metastable triplet state of the G-center [66,67] and thus encode spin-based quantum bits. [68][69][70][71] The fast recombination time of G-centers with respect to similar emitters in Si (e.g.…”

“…The transition energy shift in the emission of a center, Δ E , can be written as: $$$$\begin{equation} \Delta E =\sum _{k,l}B_{kl} \varepsilon _{kl} \end{equation}$$$$where ε kl are the strain field components (with kl pointing at the canonical frame of reference), and B kl some coefficients which form a second rank symmetric tensor. [ 42 ] Both experimental [ 48,49,67 ] and first principles studies [ 51,67,79 ] have clearly demonstrated that G‐centers, which consist of two substitutional carbons and one interstitial silicon atom, behave as first‐type monoclinic centers (C 1 h ) with an axis along the [110] direction. In this case, the number of coefficients B kl is reduced to four, and Equation can be rewritten as: $$$$\begin{equation} \Delta E = B_{1} \varepsilon _{zz} + B_{2} (\varepsilon _{xx} + \varepsilon _{yy})+2B_{3}\varepsilon _{xy}+2B_{4}(\varepsilon _{yz}-\varepsilon _{xz}) \end{equation}$$$$Depending on the particular strain field, Equation can be further simplified.…”

“…where 𝜖 kl are the strain field components (with kl pointing at the canonical frame of reference), and B kl some coefficients which form a second rank symmetric tensor. [42] Both experimental [48,49,67] and first principles studies [51,67,79] have clearly demonstrated that G-centers, which consist of two substitutional carbons and one interstitial silicon atom, behave as first-type monoclinic centers (C 1h ) with an axis along the [110] direction. In this case, the number of coefficients B kl is reduced to four, and Equation 1 can be rewritten as:…”

All-silicon quantum light source

“…Earlier research has explored waveguide-integrated G-/T-centers, along with Purcellenhanced emission from the ensemble of G-centers within a ring resonator. [1][2][3][4][5][6][7][8] In this work, we demonstrate for the first time a Purcell enhancement of a single G-center embedded in a silicon photonic crystal cavity. 9 The successful coupling of a single emissive defect to a photonic cavity mode involves alignment of dipole orientations, overlap of cavity resonance with the zero-phonon line of the quantum emitter, and optimization of the conditions for a single G-center formation.…”

All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity

“…The dipole moment of the center is computed by density functional theory [29]. It is in the plane as indicated by the red arrow in the inset of Fig.…”