Effect of Low‐Energy Accelerated Ion Bombardment on the Properties of Metal‐Organic Decomposition Derived SrBi₂(Ta,Nb)₂O₉ Thin Films Processed at Low Temperature

Abstract

Ferroelectric SrBi2(Ta,Nb)2O9 (SBTN) thin films were deposited on Pt (200 nm)/TiOx(40 nm)/SiO2 (100 nm)/Si substrates by metal‐organic decomposition. The effects of bombardment from accelerated argon and oxygen ions on the properties of SBTN thin films were investigated. It was found that the argon ion bombardment could decrease the crystallization temperature owing to the increase of internal energy of the films. Also, the oxygen vacancies at the interface between the SBTN film and platinum bottom electrode or at grain boundaries in the film were passivated through the oxygen ion treatment, resulting in the improved electrical properties. By optimizing the process parameters and using bombardment of accelerated argon and oxygen ions, SBTN films with good ferroelectric and electrical properties could be obtained, at a temperature as low as 650°C.

Applications of Ion Beam Irradiation in Multifunctional Oxide Thin Films: A Review

“…(c, d) P–E hysteresis loops of SBTN samples treated (c) by Ar + ions, and (d) by the combination of O 2 + /O + and Ar + ions with different annealing times. Reproduced from ref . Copyright 2004 John Wiley and Sons.…”

“…It has been demonstrated that the ferroelectric properties can be effectively tuned by the ion irradiation, because the ion irradiation-induced structural distortion/disorder and defects can significantly influence both the polarization and the leakage current. 15,38,39 For instance, Saremi et al 40 grew BiFeO 3 (BFO) thin films on SrRuO 3 /DyScO 3 (110) substrates by PLD. Different concentrations of defects were introduced into the BFO thin films by the helium ion irradiation with an energy of 3 MeV and various ion fluences.…”

“…The reduced leakage current was attributed to the structural disorder and isolated point defects (i.e., Pb 3+ centers and lead vacancies) introduced by the ion irradiation. Lee et al 39 treated asprepared SrBi 2 (Ta,Nb) 2 O 9 (SBTN) thin films using argon and oxygen ions with an energy of 15 keV, followed by thermal annealing at 650 °C in O 2 . As shown in Figure 1c,d, the hysteresis windows become much wider after irradiation and annealing, indicating that the ferroelectric properties are significantly improved.…”

Fabrication of V1-x Ti x O2 thin films by metal-organic decomposition using carbon thermal reduction

“…[14][15][16][17][18] In these growth techniques, metal-organic decomposition (MOD), which is categorized in CSD, has the advantages of no requirement for a large facility, low operational cost, and capability of fabricating large-area films. [19][20][21] Due to these reasons, up to date, we have fabricated high sensitive VO 2 microbolometers by MOD. 22,23) However, a VO 2 thin film indicates an abrupt resistance change of several orders of magnitude and thermal hysteresis in the vicinity of 60 °C although it has a high TCR.…”