2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) 2017
DOI: 10.1109/nano.2017.8117335
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Effect of low-energy electron beam irradiation on the current-voltage characteristics of single-walled carbon nanotube field effect transistors

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“…The CNT is divided into two types, namely the Single-Walled CNT (comprising of one CNT between the source and the drain), and Multi-walled CNT (coaxial set of multiple hollow CNTs between the source and the drain). CNTFET has the physical channel, unlike the conventional MOSFET, where the channel is induced between the source and the drain due to the applied gate voltage [1].…”
Section: Introductionmentioning
confidence: 99%
“…The CNT is divided into two types, namely the Single-Walled CNT (comprising of one CNT between the source and the drain), and Multi-walled CNT (coaxial set of multiple hollow CNTs between the source and the drain). CNTFET has the physical channel, unlike the conventional MOSFET, where the channel is induced between the source and the drain due to the applied gate voltage [1].…”
Section: Introductionmentioning
confidence: 99%