Effect of low energy oxygen ion beam on optical and electrical characteristics of dual ion beam sputtered SnO2 thin films

Chung, Jaiho; Choe, Yong-Sahm; Kim, Daeseung

doi:10.1016/s0040-6090(99)00078-4

Cited by 21 publications

(11 citation statements)

References 12 publications

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“…Taking into account the known values of the band gaps for SnO (T) and SnO 2 (T), 4,14,15 one can conclude that a complex absorption edge structure is a result of superposition of absorption curves for monoxide and dioxide phases. Thus, behavior of spectra in the region of absorption edges correlates quite well with the changes of oxide film composition.…”

Section: Optical Propertiesmentioning

confidence: 99%

TEM and XANES investigations and optical properties of SnO nanolayers

Domashevskaya¹,

Chuvenkova²,

Кашкаров³

et al. 2006

Surface & Interface Analysis

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TEM, XANES and optical investigations show that tin film oxidation starts with the formation of tetragonal tin monoxide, which is converted to unstable orthorhombic tin dioxide with the increase of annealing temperature, transferring, in its turn, into stable tetragonal tin dioxide. In our experimental conditions, no complete transition of the orthorhombic dioxide phase into the tetragonal one is observed up to a temperature of 750°C.According to XANES, data oxidation in the air of tin film surfaces starts at room temperature with the formation of an amorphous Sn-O layer. Probably, this surface layer corresponds to an amorphous membrane, which is formed at the initial stage of interaction at the phase boundaries. After 1 h annealing at temperature intervals of 170-240°C this surface layer (∼ 5 nm) mainly consists of monoxide phase. Annealing at 450-750°C leads to only tin dioxide formation in the surface layer.At least two edges can be observed at the fundamental absorption region of oxide film obtained under annealing at a temperature below 600°C, which corresponds to two values of band gaps: E g1 = 2.5-2.7 eV and E g2 ∼ 3.4 eV. With an increase of the annealing temperature up to 600°C, only one absorption edge can be observed with a greater band gap of E g2 ∼ 3.4 eV. This absorption edge corresponds to that of tin dioxide with a composition of SnO 2 for both modifications observed in our experiments. The second edge with the narrower band gap corresponds to tin monoxide, SnO, and is observed at a temperature below 550°C.

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Section: Optical Propertiesmentioning

confidence: 99%

TEM and XANES investigations and optical properties of SnO nanolayers

Domashevskaya¹,

Chuvenkova²,

Кашкаров³

et al. 2006

Surface & Interface Analysis

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“…These results do not contradict those obtained by Synders [14][15][16], who found that the value of x in SnO x changes from 0 to 2 on varying the P O 2 during reactive sputtering. As for the sample prepared at a P O 2 of 20%, its brown coloration despite SnO 2 being the main component is probably the result of the presence of oxygen vacancies inside the modifier film [17]. To assess the degree of crystallization of SnO 2 , the Figure 4 shows the relation between the weight of modifier and P O 2 .…”

Section: Partial Oxygen Pressurementioning

confidence: 99%

Surface Modification of Fine Particles with a SnO2 Film by Using a Polyhedral-Barrel Sputtering System

Abe

Higashide

Inoue

et al. 2007

Plasma Chem Plasma Process

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Fine particles were modified with a thin film of SnO 2 by using a barrel sputtering system that is a dry process. The conditions for the preparation of SnO 2 were studied by reactive sputtering onto a glass plate substrate. The optimal conditions for the preparation of tetragonal SnO 2 were identified as 60% partial oxygen pressure and 1.0 Pa total gas pressure with the substrate at room temperature. Under the optimized conditions, the surfaces of Al flake particles were modified with a thin film of SnO 2 . XRD and SEM/EDS analysis of the prepared samples showed that the Al particle surfaces were uniformly modified by a thin film of SnO 2 in all cases. The film thicknesses were 80, 130, and 180 nm at RF outputs of 195, 350, and 490 W. These measured thicknesses coincided with the values estimated from the interference colors of the samples.

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“…SnO 2 thin films are widely used in different areas of technical applications. This is a semiconductor material of n-type conductivity with the band gap E g = 3.6-4.3 eV [3][4][5] and optical transmittance of about 97% in visible and near ultraviolet ranges. The value of the SnO 2 resistivity is considerably lower than that one for most of semiconductors that opens the possibility for its applications as transparent electrical contacts in monitors and solar cells.…”

Section: Introductionmentioning

confidence: 99%