Effect of low temperature oxidation on dielectric properties of mercury sensitized photo-deposited silicon nitride films

Sahu, Binod Bihari; Srivastava, Pankaj; Agnihotri, O.P.; Shivaprasad, S. M.

doi:10.1016/j.jnoncrysol.2005.01.072

Cited by 10 publications

(7 citation statements)

References 27 publications

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“…In figure 4(b), the three peaks centred at 397.7 eV, 398.5 eV and 399.7 eV are attributed to Si-N, N-(SiO) x and Si 2 -N-O, respectively. The binding energy of the peaks matches quite well the previous studies [5,17]. These peaks observed at 102.7, 103.6, 398.5 and 399.7 eV are due to the incorporation of the oxygen element from the glass substrate during the SiN x film deposition.…”

Section: Chemical Bonding Of Sin X Filmssupporting

confidence: 89%

“…In figure 4(a), the three peaks centred at 101.4 eV, 102.7 eV and 103.6 eV are attributed to Si-N, SiN x O y and SiO 2 , respectively. The binding energy of the peaks assigned to Si-N, SiN x O y and SiO 2 matches quite well with the studies reported earlier [5,15,16]. The N 1s spectra of the samples were studied for further confirmation.…”

Section: Chemical Bonding Of Sin X Filmssupporting

confidence: 87%

“…SiN x films deposited by radio-frequency plasma enhanced chemical vapour deposition (RF-PECVD) are widely used as the protection film of semiconductor devices and the gate dielectric film of a-Si : H TFTs [1][2][3][4][5]. The performance and reliability of a-Si : H TFTs using SiN x gate dielectric films are mainly governed by its chemical composition, surface roughness, internal stress, etc which are strongly dependent on the deposition conditions [3,[6][7][8].…”

Section: Introductionmentioning

confidence: 99%

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Influences of low temperature silicon nitride films on the electrical performances of hydrogenated amorphous silicon thin film transistors

Huang¹,

Liu²,

Lin³

et al. 2008

J. Phys. D: Appl. Phys.

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Influences of silicon nitride (SiNx) films on the electrical performances of hydrogenated amorphous silicon thin film transistors (a-Si : H TFTs) are studied. Relatively low temperature (200 °C) SiNx films are prepared by plasma enhanced chemical vapour deposition at different radio-frequency powers. Results indicate that the SiNx films at a radio-frequency power of 340 W (Power density = 1.96 × 10−1 W cm−2) are near-stoichiometric and have better interface quality. Therefore, a-Si : H TFTs with this SiNx gate dielectric layer have a high field effect mobility and sustain the bias stress. The field effect mobility is 0.59 cm2 V−1 s−1 and the threshold voltage shift after a constant voltage stress (CVS) for 2.8 h is 3.18 V. The electrical degradation mechanism of a-Si : H TFTs is studied from the capacitance–voltage measurement. The degradation of the a-Si : H TFT after CVS is due to the defect generation in the SiNx gate dielectric and a-Si : H active layers. However, when the surface roughness of the SiNx film is poor, the degradation from the a-Si : H/SiNx interface is predominated. Therefore, if the SiNx film is used as a gate dielectric layer to fabricate a-Si : H TFTs, the surface roughness and chemical composition of the SiNx film should be considered simultaneously.

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Section: Chemical Bonding Of Sin X Filmssupporting

confidence: 89%

Section: Chemical Bonding Of Sin X Filmssupporting

confidence: 87%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influences of low temperature silicon nitride films on the electrical performances of hydrogenated amorphous silicon thin film transistors

Huang¹,

Liu²,

Lin³

et al. 2008

J. Phys. D: Appl. Phys.

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“…It may be associated with some unknown surface bonds possibly containing silicotive NH 2 species may be generated from NaNH 2 . These mediums for newly formed Si 3 N 4 clusters can provide silicon and/or nitrogen 18 …”

Section: Resultsmentioning

confidence: 99%

Nitridation of Silica to an α‐Silicon Nitride Nanorod Using NaNH₂ in the Autoclave at 700°C

Zhu

Chen

Huang

et al. 2007

Journal of the American Ceramic Society

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α‐silicon nitride nanorods have been synthesized through solid‐state reduction–nitridation of silica using NaNH2 as both a reductant and a nitriding reagent. X‐ray powder diffraction patterns show that the products have a hexagonal phase with lattice parameters a=7.767 Å and c=5.630 Å. Transmission electron microscopy reveals that the as‐synthesized products are pure nanorods with an average size about 30 nm in diameter and 400 nm in length. X‐ray photoelectron spectra indicate that the molar ratio of Si/N is 2.988:4. Fourier‐transform infrared spectrum yields a strong Si–N absorption at 926 cm−1 that may be a red shift due to size effect.

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“…5.1, including the assignments of the various absorption peaks. The labeling of the samples in terms of 1 to result of deposited a-SiN x InFigure 5.1, the peaks at the wavenumber of 850 cm" 1 , 1200 cm' 1 , and 3340 cm" 1 are assigned to Si-N stretching mode, N-H rocking mode, and N-H stretching mode respectively[82,83]. The peaks of N-H (1200 cm" 1 ) and Si-N (850 cm" 1 ) were fitted with Gaussian lineshape functions and their integrated areas were calculated to determine the relative nitrogen concentration.…”

mentioning

confidence: 99%

Study of SIC oxidation for device application

Zhao¹

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Silicon carbide (SiC) is a wide bandgap semiconductor that exhibits many excellent electrical properties such as high critical field strength and thermal conductivity. As a result, it has attracted a lot of attention for high temperature, high power and high frequency device applications. In addition, SiC can be thermally oxidized to form silicon dioxide (Si02), which is a critical building block of silicon complimentary metal-oxidesemiconductor (MOS) technology. This means that Si CMOS processes can be possibly transferred directly to SiC based CMOS devices. This renders SiC very attractive and offers many great advantages compared to other wide bandgap semiconductors such as gallium nitride (GaN). The development of SiC device applications is further propelled by the fact that high quality 4-inch 4H-SiC substrates are commercially available. To realize SiC based MOS devices, a high quality SiC/Si02 interface is necessary, as in the case of Si based MOS technology. However, at present the SiC/Si02 interface is still too defective for device application. The interface states density (Z)«) and the oxide fixed charge (Q ox) of SiC MOS structure are about two orders higher than those of Si MOS structure. This project aims to investigate the oxidation process of N-type 4H-SiC, such as oxidation temperature and annealing ambient, and their effects on the interface states density and oxide fixed charge. Thermally grown Si0 2 is examined as gate dielectric on N-type 4H-SiC by x-ray photoelectron spectroscopy (XPS), ellipsometry and capacitance-voltage (C-V) measurements. From XPS, it is found that CC bonds only exist at the Si02/SiC interface, whereas SiO x C y and Si-C bonds are only found in the iv ATTENTION: The Singapore Copyright Act applies to the use of this document. Nanyang Technological University Library Si0 2. At points further away from the interface and into the Si0 2 , there are more SiO x C y bonds relative to Si-C bonds. This result can be attributed to the dynamic oxidation process that transforms Si-C bonds into SiO x C y bonds, which are then further oxidized to form Si0 2 bonds. Ellipsometry is used to investigate the optical constants of thermal Si0 2 on 4H-SiC. It is found that there exists a transition layer between Si0 2 and 4H-SiC, which has a higher optical constant than pure Si0 2. The thermal oxidation temperature can influence the composition of the transition layer, especially the SiC volume fraction. Higher oxidation temperature has resulted in a lower SiC volume fraction. Nitridation of the thermal Si0 2 using N 2 0 at different temperatures was also studied. Over the temperature range from 950 °C to 1150 °C, it is found that nitridation at 1050°C gives relatively the lowest interface state density. The trap cross section constant was also investigated by AC conductance method. Higher temperature nitridation is found to result in smaller capture cross-section. Apart from thermal Si0 2 on 4H-SiC, other dielectrics such as silicon nitride (SiN x), tantalum pentoxide (Ta 2 0 5) and aluminum...

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Effect of low temperature oxidation on dielectric properties of mercury sensitized photo-deposited silicon nitride films

Cited by 10 publications

References 27 publications

Influences of low temperature silicon nitride films on the electrical performances of hydrogenated amorphous silicon thin film transistors

Influences of low temperature silicon nitride films on the electrical performances of hydrogenated amorphous silicon thin film transistors

Nitridation of Silica to an α‐Silicon Nitride Nanorod Using NaNH₂ in the Autoclave at 700°C

Study of SIC oxidation for device application

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Effect of low temperature oxidation on dielectric properties of mercury sensitized photo-deposited silicon nitride films

Cited by 10 publications

References 27 publications

Influences of low temperature silicon nitride films on the electrical performances of hydrogenated amorphous silicon thin film transistors

Influences of low temperature silicon nitride films on the electrical performances of hydrogenated amorphous silicon thin film transistors

Nitridation of Silica to an α‐Silicon Nitride Nanorod Using NaNH2 in the Autoclave at 700°C

Study of SIC oxidation for device application

Contact Info

Product

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Nitridation of Silica to an α‐Silicon Nitride Nanorod Using NaNH₂ in the Autoclave at 700°C