2014
DOI: 10.1016/j.mssp.2014.08.024
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Effect of magnesium incorporation on the structural, morphological, optical and electrical properties of CdS thin films

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Cited by 72 publications
(25 citation statements)
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“…The S vacancies act as deep level traps for electrons and they can exothermically extract electrons from the valence band. This is in accordance with the results reported by Sivaraman et al [23] for Mg-doped CdS thin films. The emission peak at 521 nm may be due to the presence of electron hole recombination via trap states or imperfection sites [24].…”
Section: Resultssupporting
confidence: 94%
“…The S vacancies act as deep level traps for electrons and they can exothermically extract electrons from the valence band. This is in accordance with the results reported by Sivaraman et al [23] for Mg-doped CdS thin films. The emission peak at 521 nm may be due to the presence of electron hole recombination via trap states or imperfection sites [24].…”
Section: Resultssupporting
confidence: 94%
“…It has been reported earlier that the optoelectronic properties of CdS thin films can be improved by doping with metallic and non-metallic ions having ionic radii smaller than the host ions. Improved optical and electrical properties have been reported by Anbarasi et al 7 and Sivaraman et al 8 for Zn and Mg doped CdS thin films. Improved conductivity has also been reported for CdS films doped with copper.…”
Section: Introductionmentioning
confidence: 72%
“…Information regarding the point defects present in thin films such as vacancies, interstitials and impurities can be obtained from PL studies [23]. Figure 6 displays the PL spectra of the undoped and Mg-doped Sn 2 S 3 (Mg doping levels: 2 and 3 wt%) thin films, excited at λ = 400 nm.…”
Section: Pl Studiesmentioning
confidence: 99%