Effect of Magnetic Co–CoO Particles on the Carrier Transport in Monolayer Graphene

Fedotova, J.; Харченко, А. А.; Fedotov, А.К.; Chichkov, M. V.; Малинкович, М. Д.; Konakov, Artem; Vorobyova, S. A.; Kasiuk, J.; Gumiennik, Uladzislaw; Kula, Monika; Mitura‐Nowak, Marzena; Maximenko, Alexey; Przewoźnik, J.; Kapusta, Cz.

doi:10.1134/s1063783420020134

Cited by 3 publications

(3 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To identify possible mechanisms of carrier transport in the studied graphene samples, we re-plotted R (T ) curves in various coordinate systems. The analysis of the temperature dependences of the resistance in the Mott and Arrhenius scales [17,19,20] showed that, as in the case of sample 3 [23], samples 1 and 2 failed to reveal a noticeable contribution of hopping and/or tunneling mechanisms to their conductivity. At the same time, in the twisted sample 4, among other types of conductivity, the contribution from two-dimensional hopping transport was earlier revealed [26].…”

Section: Resultsmentioning

confidence: 97%

“…The error in ρ(T ) and σ (T ) measurements were mainly limited by the size of electric contacts and intercontact distances, and was equal or less than 5%. Installation details were previously described in [23,26]. 1.…”

Section: Measurement Methodsmentioning

confidence: 99%

“…Removal of PMMA was carried out in acetone. After transfer to a dielectric substrate, type 3 samples of graphene possess a Raman spectrum characteristic of a monolayer (see [23]).…”

Section: The Technology Of Samples Preparationmentioning

confidence: 99%

See 2 more Smart Citations

Sheet Resistance and Magnetoresistance in Polycrystalline CVD Graphenes

Fedotov

Харченко

Gumiennik

et al. 2022

Physics of the Solid State

View full text Add to dashboard Cite

Temperature and magnetic field dependencies of sheet resistance R#(T,B) in polycrystalline CVD graphene, investigated in the range of 2≤ T≤ 300 K and magnetic fields 0≤ B≤ 8 T, allowed to determine carrier transport mechanisms in single-layered and twisted CVD graphene. It is shown that for R#(T,B) curves for such samples are described by the interference quantum corrections to the Drude conductivity independently on type of precursor and peculiarities of graphene transfer from Cu foil onto the various substrates (glass or SiO2). The twisted CVD graphene samples have demonstrated additional contribution of 2D hopping conductivity into the R#(T,B) dependencies. Keywords: graphene, single layer, twisted layers, CVD, carrier transport, magnetoresistance.

show abstract