We incorporated a ≈5-nm-thick MnO x insertion layer in the middle of a ≈1.38-m-thick Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 (PLZT) film grown by a modified sol-gel process and measured the dielectric and ferroelectric properties of PLZT films with and without MnO x insertion layer. By incorporation of the MnO x layer, residual stress was reduced from ≈350 MPa to ≈125 MPa, dielectric permittivity decreased from ≈1300 to ≈950, while dielectric loss increased from ≈0.04 to ≈0.07 as measured at 10 kHz. Also, remanent polarization increased from ≈9.1 µC/cm 2 to ≈11.7 µC/cm 2 , coercive field increased from ≈28.7 kV/cm to ≈40.3 kV/cm, and internal bias field from ≈3 kV/cm to ≈14 kV/cm. We have observed decreased irreversible Rayleigh coefficient and dielectric nonlinearity on samples with MnO x insertion layer. These changes in properties are attributable to Mn cation doping as acceptors near the MnO x /PLZT interface, which forms oxygen vacancies and defect induced dipoles likeacting effectively as pinning centers to hinder domain wall movement.