Effects of both wet chemical treatments and line pattern densities on the interfacial bonding characteristics of Cu–Cu pattern direct bonds were systematically investigated. The silicon oxide (SiO2) on a parallel Cu lines patterned wafer could be removed effectively by using a solution of buffered oxide etch and sulfuric acid (BOE/H2SO4) to improve the bonding quality of Cu–Cu pattern direct bonds. The Cu surface after BOE/H2SO4 wet pretreatment revealed the complete removal of both the residue particles and the surface oxide layer. After BOE/H2SO4 wet pretreatment, the interfacial adhesion energies of 0.06, 0.09, and 0.23 pattern densities were 7.9, 4.8, and 4.1 J/m2, respectively, where the dielectric erosion due to chemical–mechanical polishing (CMP) process with increasing pattern density significantly affected the Cu–Cu pattern direct bonding quality. Therefore, CMP planarization performance is critical for reliable Cu pattern direct bonding.