Effect of metal contact size on the metal-semiconductor junction characteristics

Patole, Shashikant P.; Ali, Ahmed; Alkindi, Fatmah; Rezeq, Moh’d

doi:10.1109/nano.2018.8626418

Cited by 1 publication

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“…The area of the AFM tip within the PCM module is ≈50 nm 2 . [63][64][65] In addition, the laser irradiation on the sample appears as an ellipse spot with an area of 60.38 mm 2 (Figure S10, Supporting Information). When the power density increased from 31.7 to 79.4 mW cm −2 , the responsivities under 395 nm wavelength laser decreased from 43.6 to 18.2 A W −1 .…”

Section: Resultsmentioning

confidence: 99%

Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO₂ for High‐Performance Photodetection

Chen,

Yu Chen,

et al. 2023

Adv Materials Inter

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Few rare‐earth (RE) atoms incorporated in lattice greatly tunned the optical, electrical, magnetic, and catalytic performance of doped crystal through the peculiar atomic electron structure of RE. The dimensionality scale‐down of RE oxides can further promote their unique traits and broaden their applications. The UV photodetection performance of (111) oriented CeO2 thin film is limited by the existence of grain boundaries, defects, and strains. Consequently, single‐crystal 2D CeO2 is promising for photodetection as it lacks of grain boundaries and defects. However, the synthesis of large‐sized high‐quality 2D CeO2 with lateral dimensions over 100 µm is challenging. In this work, a 3.9 nm thick CeO2 single crystal with 120 µm lateral size is synthesized over a sapphire substrate through a salt‐assisted chemical vapor deposition method, in which an intermediate insulating CeAlO3 layer is formed between the substrate and 2D CeO2 to enhance the crystal lattice matching and therefore facilitates the large area growth. The photodetector based on 2D CeO2 exhibits a photo response from 395 to 532 nm, possibly ascribed to a micro‐strain narrowed bandgap induced at the heterointerface. The photoresponsivity reaches 43.6 A W−1 while the detectivity reaches 7.58 × 1011 Jones under the 395 nm laser irradiation. Besides, the sub‐ms switching kinetics is achieved without gating bias, which is significantly improved over other reported RE oxides‐based photodetectors. This work demonstrates the possibility of the synthesis of large‐size high‐quality 2D RE oxides and their strong potential in high‐performance optoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO₂ for High‐Performance Photodetection

Chen,

Yu Chen,

et al. 2023

Adv Materials Inter

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Effect of metal contact size on the metal-semiconductor junction characteristics

Cited by 1 publication

References 6 publications

Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO₂ for High‐Performance Photodetection

Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO₂ for High‐Performance Photodetection

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Effect of metal contact size on the metal-semiconductor junction characteristics

Cited by 1 publication

References 6 publications

Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance Photodetection

Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO2 for High‐Performance Photodetection

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Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO₂ for High‐Performance Photodetection

Lattice Matching Engineering Driven Growth of Large‐Area 2D CeO₂ for High‐Performance Photodetection