Effect of MgO in ZnO films grown on nitrided sapphires

Wang, Yong; Mei, Z. X.; Yuan, Ht T.; Du, Xiaolong; Zou, Jin; Jin, Jia; Xue, Q. K.; Zhang, Z.

doi:10.1016/j.jcrysgro.2007.03.059

Cited by 5 publications

(5 citation statements)

References 20 publications

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“…The techniques commonly used for MBE ZnO on MgO deposition are mostly based on the following scheme: deposition of a thin MgO nucleation layer, deposition of a thin ZnO nucleation layer at a low temperature (denoted herein as ZnO LT ), in situ annealing and deposition of the ZnO layer at a higher temperature (ZnO HT ) [1][2][3][4][5][6]. After reviewing the literature, the following procedure was adapted for the preparation of the samples: Al 2 O 3 (0001) substrates were cleaned by boiling in hot organic solvents, rinsed with deionised water and blown dry with N 2 gas.…”

Section: Methodsmentioning

confidence: 99%

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ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering

et al. 2011

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Section: Methodsmentioning

confidence: 99%

“…Due to high prices of free standing high-quality ZnO substrates, most of the scientific work on ZnO deposition is performed on sapphire substrates, which however has an 18% lattice mismatch to ZnO. To cope with this problem, thin MgO [1][2][3][4]. They can also be used to control the polarity of ZnO films grown on them [5,6].…”

Section: Introductionmentioning

confidence: 99%

ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering

et al. 2011

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“…20 Direct comparison of the photoluminescence and pump-probe spectra between multilayers of different MgO thickness is impossible because the ZnO defect population is a function of the MgO thickness. 21 Instead, each spectrum may only be compared directly with spectra from multilayers grown under identical parameters. The stoichiometry of the ZnO films has been confirmed by rutherford backscattering spectroscopy (RBS), and the quality of the films is demonstrated by the ratio of the band-edge emission to the impurity emission in the room temperature PL spectra presented in fig.…”

Section: Fabricationmentioning

confidence: 99%

Coupling dynamics between photoluminescent centers in ZnO and surface plasmons

Lawrie

Haglund

2009

SPIE Proceedings

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Nanostructured metal-ZnO systems provide an ideal workbench for studying the dynamics of exciton-plasmon coupling. In order to characterize the interactions, we grew tri-layer structures comprising thin films of ZnO, variable-thickness spacer layers of MgO, and thin films of Ag or Au. Analysis of the photoluminescence of these structures as a function of increasing MgO thickness confirms the existence of surface plasmon polariton-exciton coupling through Purcell enhancement of the excitonic emission for MgO films thinner than 30 nm, and through emission at the SPP resonance for MgO films thicker than 30 nm. Further, we demonstrate the enhancement of the ZnO impurity photoluminescence through dipole-dipole scattering with Ag and Au LSPs. Preliminary degenerate band-edge pump-probe measurements confirm the conclusions developed from photoluminescence measurements. In order to disentangle and further quantify the interactions seen in these systems, we are lithographically patterning metal nanoparticle arrays and metal hole arrays on ZnO quantum wells and beginning to perform white-light pump-probe spectroscopy to fully characterize the dynamics of energy transfer within these systems.

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“…Researchers from all over the world have reported a range of approaches in the literature for depositing ZnO thin films by manipulating key parameters and employing diverse methodologies. Multiple techniques including physical vapor deposition, chemical vapor deposition, chemical solution deposition, molecular beam epitaxy [20][21][22][23], sputtering [24], spray pyrolysis [25][26][27], electrodeposition [28,29], and sol-gel technique [30][31][32][33] have been used to fabricate thin films. Compared to other approaches, pulsed laser deposition (PLD) has various benefits, including the ability to create high-quality thin films at low temperatures, ease and low cost of manufacturing multi-layers compared to other processes, and the ability to fabricate uniform thin films.…”

Section: Introductionmentioning

confidence: 99%

The role of saturable absorbers thickness in the Q-switching of the erbium-doped fiber laser

Ajmal¹,

Bibi²,

Ahmed³

et al. 2023

Laser Phys. Lett.

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A passively Q-switched Erbium (Er3+) doped fiber laser (EDFL) based on a ZnO saturable absorber (SA) prepared using a pulsed laser deposition (PLD) technique is demonstrated. The in-situ monitoring of the thickness in the PLD system enabled the control of the SA’s thickness during the growth. The thickness of the SA was varied and the output characteristics of the fiber laser with all thicknesses are compared. This study reveals that the performance and efficiency of an EDFL including pulse repetition rates, pulse duration, pulse energy, peak power, stability, and signal-to-noise ratio can be improved by varying the thickness of the SA. Based on the thickness of the SA, the optimized results are also presented. These findings suggest that the thickness control of the SA film grown directly on the fiber ferrule facilitates much-improved EDFL that has potential applications in pulsed laser sources.

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Effect of MgO in ZnO films grown on nitrided sapphires

Cited by 5 publications

References 20 publications

ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering

ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering

Coupling dynamics between photoluminescent centers in ZnO and surface plasmons

The role of saturable absorbers thickness in the Q-switching of the erbium-doped fiber laser

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