Effect of microplate size on the semiconductor–metal transition in VO<sub>2</sub> thin films

Guo, Xitao; Tan, Yi; Hu, Yupei; Zafar, Zainab; Liu, Xin; Li, Feng; Zou, Ji‐Jun

doi:10.1039/d2nj01324j

Cited by 2 publications

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“…Vanadium dioxide (VO 2 ) has attracted considerable amounts of attention recently as a strong electron-correlated material since it exhibits a reversible metal-insulator transition (MIT) at a crucial temperature (T MIT ) of about 340 K. 1 This transition of VO 2 , which transforms it from its low-temperature insulating monoclinic phase to the high-temperature metallic rutile phase, correlates with a significant jump in resistance of 3-5 orders of magnitude and a significant variation in optical transmittance, particularly at near-infrared wavelengths. 2,3 VO 2 materials and devices have intriguing applications in smart windows, 4 optical and electrical switches, 5,6 photodetectors, 7,8 and chemical sensors 9,10 attributed to the extraordinary electrical and optical switching features established at the MIT. The Mott transition, which is driven by electron-electron interactions, and the Peierls transition, corresponding to the transformation of the lattice (electron-lattice coupling), 11 have been the two primary mechanisms employed to explain the microscopic origin of MIT in VO 2 .…”

Section: Introductionmentioning

confidence: 99%

Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO₂ nanobeams

Guo,

Liu,

Zafar

et al. 2024

Phys. Chem. Chem. Phys.

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Section: Introductionmentioning

confidence: 99%

Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO₂ nanobeams

Guo,

Liu,

Zafar

et al. 2024

Phys. Chem. Chem. Phys.

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Metal-insulator transition effect on Graphene/VO$$_\text {2}$$ heterostructure via temperature-dependent Raman spectroscopy and resistivity measurement

Lerttraikul,

Rattanasakuldilok,

Pakornchote

et al. 2024

Sci Rep

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High-quality VO$$_2$$ 2 films were fabricated on top of c-Al$$_2$$ 2 O$$_3$$ 3 substrates using Reactive Bias Target Ion Beam Deposition (RBTIBD) and the studies of graphene/VO$$_2$$ 2 heterostructure were conducted. Graphene layers were placed on top of $$\sim$$ ∼ 50 and $$\sim$$ ∼ 100 nm VO$$_2$$ 2 . The graphene layers were introduced using mechanical exfoliate and CVD graphene wet-transfer method to prevent the worsening crystallinity of VO$$_2$$ 2 , to avoid the strain effect from lattice mismatch and to study how VO$$_2$$ 2 can affect the graphene layer. Slight increases in graphene/VO$$_2$$ 2 T$$_\text {MIT}$$ MIT compared to pure VO$$_2$$ 2 by $$\sim$$ ∼ 1.9 $$^{\circ }$$ ∘ C and $$\sim$$ ∼ 3.8 $$^{\circ }$$ ∘ C for CVD graphene on 100 and 50 nm VO$$_2$$ 2 , respectively, were observed in temperature-dependent resistivity measurements. As the strain effect from lattice mismatch was minimized in our samples, the increase in T$$_\text {MIT}$$ MIT may originate from a large difference in the thermal conductivity between graphene and VO$$_2$$ 2 . Temperature-dependent Raman spectroscopy measurements were also performed on all samples, and the G-peak splitting into two peaks, G$$^{+}$$ + and G$$^{-}$$ - , were observed on graphene/VO$$_2$$ 2 (100 nm) samples. The G-peak splitting is a reversible process and may originates from in-plane asymmetric tensile strain applied under the graphene layer due to the VO$$_2$$ 2 phase transition mechanism. The 2D-peak measurements also show large blue-shifts around 13 cm$$^{-1}$$ - 1 at room temperature and slightly red-shifts trend as temperature increases for 100 nm VO$$_2$$ 2 samples. Other electronic interactions between graphene and VO$$_2$$ 2 are expected as evidenced by 2D-peak characteristic observed in Raman measurements. These findings may provide a better understanding of graphene/VO$$_2$$ 2 and introduce some new applications that utilize the controllable structural properties of graphene via the VO$$_2$$ 2 phase transition.

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Effect of microplate size on the semiconductor–metal transition in VO₂ thin films

Abstract: VO2 thin films composed of irregular shaped microplates have been synthesized using V2O5 precursor via vapor transport technique. SEM images showed that the microplate sizes in VO2 films tend to...

Cited by 2 publications

References 34 publications

Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO₂ nanobeams

Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO₂ nanobeams

Metal-insulator transition effect on Graphene/VO$$_\text {2}$$ heterostructure via temperature-dependent Raman spectroscopy and resistivity measurement

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Effect of microplate size on the semiconductor–metal transition in VO2 thin films

Abstract: VO2 thin films composed of irregular shaped microplates have been synthesized using V2O5 precursor via vapor transport technique. SEM images showed that the microplate sizes in VO2 films tend to...

Cited by 2 publications

References 34 publications

Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO2 nanobeams

Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO2 nanobeams

Metal-insulator transition effect on Graphene/VO$$_\text {2}$$ heterostructure via temperature-dependent Raman spectroscopy and resistivity measurement

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Product

Resources

About

Effect of microplate size on the semiconductor–metal transition in VO₂ thin films

Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO₂ nanobeams

Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO₂ nanobeams