Effect of microstructure on the electronic transport properties of epitaxial CaRuO 3 thin films

Daptary, Gopi Nath; Sow, Chanchal; Sarkar, Suman; Chiniwar, Santosh; Kumar, P. S. Anil; Sil, Anomitra; Bid, Aveek

doi:10.1016/j.physb.2017.02.005

Physica B: Condensed Matter

2017

DOI: 10.1016/j.physb.2017.02.005

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Effect of microstructure on the electronic transport properties of epitaxial CaRuO 3 thin films

Gopi Nath Daptary

Chanchal Sow

Suman Sarkar

et al.

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Cited by 4 publications

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Weak antilocalization and sign inversion of magnetoresistance on CaRuO3 epitaxial films

Alagoz,

Egilmez,

Hamdan

et al. 2024

Applied Physics Letters

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CaRuO3 is a prototypical perovskite oxide among the Ruddlesden–Popper series with multi-exotic physical properties on the verge of quantum criticality. Unlike the case of the well-known ferromagnetic SrRuO3, the literature on the physical properties of the CaRuO3 system is scarce with no consensus about its magnetic and transport ground states. This work provides a detailed study of the magnetotransport properties of 300 nm CaRuO3 epitaxial films grown on single crystalline SrTiO3 and LaAlO3 substrates. The magnetic and electronic ground states in tensile strained CaRuO3/SrTiO3 films and compressively strained CaRuO3/LaAlO3 films are found to be distinctly different. In particular, in zero magnetic field, the high-temperature resistivity of both films show a T1/2 non-Fermi liquid behavior. Cooling below 30 K, CaRuO3/SrTiO3 undergoes metal–insulator-transition ascribed by 3D weak localization, with signs of weak ferromagnetic-like domains. By contrast, the transport data of the nonmagnetic CaRuO3/LaAlO3 film below 30 K, show T3/2 non-Fermi liquid type behavior. Magnetoresistance in CaRuO3/SrTiO3 shows combination of weak antilocalization and weak localization behaviors deep in the insulating side, emphasizing the existence of spin–orbit coupling and the strong influence of ferromagnetic impurities. Moreover, the nonlinearity signals in CaRuO3/SrTiO3 Hall measurements could be described by anomalous Hall effects. Interestingly, below 30 K, magnetoresistance and Hall in CaRuO3/LaAlO3 change sign, indicating an inversion from hole-like to electron-like behavior. We discuss the sensitivity of the 300 nm CaRuO3/SrTiO3 and CaRuO3/LaAlO3 films to the 30 K temperature, an additional quantum critical feature to the ruthenate oxides.

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Weak antilocalization and sign inversion of magnetoresistance on CaRuO3 epitaxial films

Alagoz,

Egilmez,

Hamdan

et al. 2024

Applied Physics Letters

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Conductivity noise across temperature-driven transitions of rare-earth nickelate heterostructures

et al. 2019

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Extraordinary alternating metal-insulator transitions in CaRuO3 ultrathin films at integer multiples of 25 Å of thickness

et al. 2021

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Effect of microstructure on the electronic transport properties of epitaxial CaRuO 3 thin films

Cited by 4 publications

References 32 publications

Weak antilocalization and sign inversion of magnetoresistance on CaRuO3 epitaxial films

Weak antilocalization and sign inversion of magnetoresistance on CaRuO3 epitaxial films

Conductivity noise across temperature-driven transitions of rare-earth nickelate heterostructures

Extraordinary alternating metal-insulator transitions in CaRuO3 ultrathin films at integer multiples of 25 Å of thickness

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